Abstract: A substrate processing apparatus includes a susceptor on which a substrate is placed, a processing chamber that accommodates the susceptor, a multi-wavelength light source that generates multi-wavelength light, a light absorption chamber partially comprising a transmission plate for allowing the multi-wavelength light to pass therethrough and configured to prevent a gas from accessing the processing chamber, an introducing pipe that introduces the gas into the light absorption chamber, and an exhaust pipe that exhausts the gas from the light absorption chamber, wherein the multi-wavelength light passes through the transmission plate, then passes through the light absorption chamber and reaches the substrate.

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract: To diagnose vulnerabilities such as SQL injection, even for web-server devices that change the content of responses to requests in accordance with prescribed conditions. A normal-response collection means (10) transmits a normal request (REQN), accompanied by a registered user ID and password, a plurality of times. Said normal-response collection means (10) receives a plurality of responses (RESN) (hereafter “normal responses”) from a web server in response to the normal requests. A common-region extraction means (12) extracts a common region from the plurality of normal responses. An abnormal-response collection means (18) performs SQL injection on the web server, receives the response (RESA) (hereafter “abnormal response”), and records same in a storage unit (16). A determination means (14) determines that the web server has a vulnerability if the normal responses and the abnormal response are the same in the common region.

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract: A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer.

Abstract: To diagnose vulnerabilities such as SQL injection, even for web-server devices that change the content of responses to requests in accordance with prescribed conditions. A normal-response collection means (10) transmits a normal request (REQN), accompanied by a registered user ID and password, a plurality of times. Said normal-response collection means (10) receives a plurality of responses (RESN) (hereafter “normal responses”) from a web server in response to the normal requests. A common-region extraction means (12) extracts a common region from the plurality of normal responses. An abnormal-response collection means (18) performs SQL injection on the web server, receives the response (RESA) (hereafter “abnormal response”), and records same in a storage unit (16). A determination means (14) determines that the web server has a vulnerability if the normal responses and the abnormal response are the same in the common region.

Abstract: A thin film is formed by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using a reactant gas and a plasma, wherein the reactant gas is supplied substantially uniformly over the substrate, and the plasma is pulse-time-modulated and applied in the process of supplying the reactant gas.

Abstract: A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii).

Abstract: A thin film is formed by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using a reactant gas and a plasma, wherein the reactant gas is supplied substantially uniformly over the substrate, and the plasma is pulse-time-modulated and applied in the process of supplying the reactant gas.

Abstract: A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at ?50° C. to 100° C.