Abstract: An electrolytic cell capable of simply electrolyzing carbon dioxide into carbon monoxide and oxygen with low activation energy, and an electrolytic device. The carbon dioxide electrolytic cell includes a cathode, an anode, and a solid electrolyte having oxide ion conductivity. The cathode is the following (A) or (B); (A) a metal and a first mayenite-type compound are included therein or (B) a metal and a second mayenite-type compound are included therein, said second mayenite type compound including a mayenite type compound having electron conductivity.

Abstract: An on-vehicle apparatus includes an abnormal section determination part that determines a road section having a road surface on which an abnormality is probably present, based on an output value of a sensor mounted on a vehicle, an image selection part that selects an image(s) including the determined road section from a plurality of images shot at predetermined time intervals by a camera mounted on the vehicle, and a transmission part that is able to transmit the selected image(s) to a predetermined server.

Abstract: A data collection apparatus, including: a data reception part that receives sensor data from a vehicle capable of photographing a road surface, the sensor data being acquired by a sensor mounted on the vehicle; and a control part that evaluates a goodness degree of a road surface photographing environment on a basis of the sensor data and control a transmission from the vehicle of a road surface photographed image on a basis of the goodness degree of the road surface photographing environment.

Abstract: A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.

Abstract: A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of the piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of ±10° with respect to the surface of the substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

Abstract: The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: A piezoelectric device includes a piezoelectric member and a pair of electrodes, and for piezoelectric constants d33 and d31 of the piezoelectric member, the following relational expression (I) is established: 0.1?|d33/d31|?1.8.

Abstract: The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: The invention provides a method of forming, on a substrate, a thin film of a perovskite type oxide in which at least either of a site A and a site B is constituted of plural elements and the plural elements in at least either site include elements different in valence number within such site, the method including steps of dividing the elements belonging to the site A and the site B in plural groups in such a manner that the elements different in valence number belong to a same group, and supplying the substrate with raw materials containing the elements belonging to such respective groups in respectively different steps.

Abstract: To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

Abstract: A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure represented by ABO3 where site A includes Pb as a main component and site B includes a plurality of elements, wherein the perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.

Abstract: The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

Abstract: A lead zirconate titanate-based thin film is an epitaxial crystal thin film and has a chemical composition represented by the general formula Pb1-xLnxZryTi1-yO3 (wherein Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin; and 0?x<1, 0.43?y?0.65) and whose orientation is {111} (including orientations whose tilt angle from the direction perpendicular to the substrate surface is within 15°).

Abstract: After completion of a prediction process for a single line in an image of size S, the DC components and AC components, held in a lower stage part of a predicted luminance value storage are copied into a line part. This copying is done to use the DC components and AC components that have been copied into line part as reference values for the prediction process of the target macro blocks of the next single line. Performing the prediction process while repeating such copying eliminates the need to secure the area for storing of the DC components and AC components of the entire image size in predicted luminance value storage for the prediction process.

Abstract: A lead zirconate titanate-based thin film is an epitaxial crystal thin film and has a chemical composition represented by the general formula Pb1-xLnxZryTi1-yO3 (wherein Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin; and 0≦x<1, 0.43≦y≦0.65) and whose orientation is {111} (including orientations whose tilt angle from the direction perpendicular to the substrate surface is within 15°).

Abstract: After completion of a prediction process for a single line in an image of size S, the DC components and AC components, held in a lower stage part of a predicted luminance value storage are copied into a line part. This copying is done to use the DC components and AC components that have been copied into line part as reference values for the prediction process of the target macro blocks of the next single line. Performing the prediction process while repeating such copying eliminates the need to secure the area for storing of the DC components and AC components of the entire image size in predicted luminance value storage for the prediction process.