Abstract: A production method of a solid-state imaging device in which microlenses are arranged adjacent to each other on a substrate, includes: a first process of forming first microlenses on a surface of the substrate leaving space therebetween for providing second microlenses; and a second process of applying an overcoating material onto the surface of the substrate on which the first microlenses are formed, drying the overcoating material, exposing the overcoating material to light using a gray scale mask, and developing the exposed overcoating material, so as to form second microlenses in the space between the first microlenses adjacent to each other.

Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.

Abstract: A production method of a solid-state imaging device in which microlenses are arranged adjacent to each other on a substrate, includes: a first process of forming first microlenses on a surface of the substrate leaving space therebetween for providing second microlenses; and a second process of applying an overcoating material onto the surface of the substrate on which the first microlenses are formed, drying the overcoating material, exposing the overcoating material to light using a gray scale mask, and developing the exposed overcoating material, so as to form second microlenses in the space between the first microlenses adjacent to each other.

Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.

Abstract: There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.

Abstract: The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices.

Abstract: A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.

Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and contributes toward an improvement in production efficiency. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the substrate by use of lithography process, and that the composition is coated on the substrate prior to coating of the photoresist, and comprises a polymer having a hydroxy group or a carboxy group and a crosslinking agent. The gap fill material layer obtained from the gap fill material forming composition can be etched back with an alkaline aqueous solution.

Abstract: A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.

Abstract: There is provided a composition for forming anti-reflective coating for use in a lithography which has a high effect of inhibiting reflected light, causes no intermixing with resist layers, affords excellent resist patterns, has a higher dry etching rate compared with the resist, and has broader margin of depth of focus and higher resolution than the prior compositions. Concretely, the composition is one for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, and comprises a resin containing a lactone structure. The resin is one which a ?-lactone structure or a ?-lactone structure is introduced to a main chain thereof or a side chain bonded to the main chain.

Abstract: A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.

Abstract: The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices.

Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and contributes toward an improvement in production efficiency. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the substrate by use of lithography process, and that the composition is coated on the substrate prior to coating of the photoresist, and comprises a polymer having a hydroxy group or a carboxy group and a crosslinking agent. The gap fill material layer obtained from the gap fill material forming composition can be etched back with an alkaline aqueous solution.

Abstract: There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.

Abstract: The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.

Abstract: There is provided a composition for forming anti-reflective coating for use in a lithography which has a high effect of inhibiting reflected light, causes no intermixing with resist layers, affords excellent resist patterns, has a higher dry etching rate compared with the resist, and has broader margin of depth of focus and higher resolution than the prior compositions.

Abstract: A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof.

Abstract: The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.