Abstract: A green phosphor represented by the formula: A(Zn1?xMnx)Al10O17 wherein A is Ca, Ba or Sr and x is a number satisfying 0.02?x?0.14.

Abstract: A green phosphor having a magnetoplumbite-type crystal structure, which contains at least Mn, La and Tb, which contains at least Tb and La but does not contain Ce or which contains at least Mn, La and Zn.

Abstract: In the present invention, the process of forming the dielectric layer is carried out by laminating a dielectric thin film sheet on a substrate. Alternatively, it is carried out by sealing together a dielectric thin film sheet and the rear-side substrate whilst leaving a discharge gap therebetween. In particular, by using a dielectric thin film sheet to constitute the dielectric layer formed onto the display-side substrate, which must be transparent, the conventional processes of printing and anneling become unnecessary. For this dielectric thin film sheet, a micro-sheet comprising borosilicate glass or soda-lime glass as a principal component is used. This micro-sheet may have a thickness of 5 &mgr;m or less, and it is suitable as a dielectric layer for a plasma display panel.

Abstract: The gas discharge panel according to the present invention includes a pair of substrates, a plurality of barrier ribs, a sealing member, and two gas flow barriers. One of the substrates has a first vent hole and a second vent hole provided in a peripheral portion thereof for intercommunication between the inside and outside of the panel. The at least two gas flow barriers are provided between the sealing member and the barrier ribs located on opposite sides of an arrangement of the barrier ribs so that a gas introduced from the first vent hole flows through inter-rib spaces defined between adjacent pairs of barrier ribs and is expelled from the second vent hole.

Abstract: A cathode device comprising a plurality of emitter tips having conical tip end portions to emit electrons therefrom. A gate electrode layer has an opening through which the tip end portion of each of the emitter tips is exposed. The diameter of the opening in the gate electrode layer is made smaller than that of the portion of the emitter tip at the juncture thereof with the substrate. In the fabrication of the cathode device, an oxide layer is formed at least on the surface of the formed emitter tip to sharpen the latter. By removing the oxide layer, an inner circumferential wall of the opening of the gate electrode layer is formed on the outside of the conical tip end portion of the emitter tip and extends approximately in parallel to the conical tip end portion of the emitter tip.

Abstract: A method for fabrication of a display device is provided which comprises the steps of: forming an aluminum electrode having a predetermined configuration on a substrate; and treating the aluminum electrode with a solution containing an oxidizing agent to form on a surface of the aluminum electrode a compound film containing as a principal component a substance derived from the solution containing the oxidizing agent.

Abstract: An electron emitter element is provided which comprises: an insulating base having a gate opening and a slit communicating to the gate opening; an emitter electrode layer formed in the gate opening and the slit on the insulating base; an emitter tip formed in the gate opening on the emitter electrode layer; a gate electrode layer formed on a top surface of the insulating base as circumscribing the gate opening and extending perpendicular to the emitter electrode layer; and the gate electrode layer and the emitter electrode layer being crossed each other with nothing interposed therebetween.

Abstract: A method for fabrication of a display device is provided which comprises the steps of: forming an aluminum electrode having a predetermined configuration on a substrate; and treating the aluminum electrode with a solution containing an oxidizing agent to form on a surface of the aluminum electrode a compound film containing as a principal component a substance derived from the solution containing the oxidizing agent.

Abstract: A cathode device includes a plurality of emitter tips having conical tip end portions to emit electrons therefrom. A gate electrode layer has an opening through which the tip end portion of each of the emitter tips is exposed. The diameter of the opening in the gate electrode layer is made smaller than that of the portion of the emitter tip at the juncture thereof with the substrate. In the fabrication of the cathode device, an oxide layer is formed at least on the surface of the formed emitter tip to sharpen the latter. By removing the oxide layer, an inner circumferential wall of the opening of the gate electrode layer is formed on the outside of the conical tip end portion of the emitter tip and extends approximately in parallel to the conical tip end portion of the emitter tip.

Abstract: A field emitter array includes electron-beam source elements, each including a cathode for emitting electrons and a gate provided in the vicinity of the cathode. To emit electrons from the cathode by the field emission effect, a cathode voltage is applied to the cathode and a gate voltage is applied to the gate. An anode is arranged in proximity to the cathode and supplied with a positive anode voltage to capture electrons from the cathode in a first (e.g., normal or display) mode of operation. In a second (e.g., cleaning) mode of operation of the field emitter array, a negative anode voltage is supplied to the anode to urge electrons emitted by a first cathode, back toward a second cathode supplied with a cathode voltage which attracts electrons, to clean the second cathode.

Abstract: A cathode device comprising a plurality of emitter tips having conical tip end portions to emit electrons therefrom. A gate electrode layer has an opening through which the tip end portion of each of the emitter tips is exposed. The diameter of the opening in the gate electrode layer is made smaller than that of the portion of the emitter tip at the juncture thereof with the substrate. In the fabrication of the cathode device, an oxide layer is formed at least on the surface of the formed emitter tip to sharpen the latter. By removing the oxide layer, an inner circumferential wall of the opening of the gate electrode layer is formed on the outside of the conical tip end portion of the emitter tip and extends approximately in parallel to the conical tip end portion of the emitter tip.

Abstract: Microscale cold cathodes include a metallic emitter tip with a very sharp end. The microscale cold cathodes are manufactured by forming a cone of metal on a substrate, oxidizing the surface of the cone, and removing the oxidized film from the cone surface to produce an emitter tip.