Abstract: A sulfide solid electrolyte is capable of suppressing a decrease in Li ion conductivity due to moisture. A sulfide solid electrolyte includes a Li element, a P element, a S element and an O element, and having a granular shape, and including a crystal portion oriented along the granular shape, on an inner surface of the sulfide solid electrolyte.

Abstract: A refrigerant leakage management system includes a timer and a controller. The timer counts a non-operating period of a refrigeration cycle device. The controller determines whether or not the non-operating period of the refrigeration cycle device exceeds a predetermined first period. Upon determining that the non-operating period of the refrigeration cycle device exceeds the first period, the controller brings the refrigeration cycle device into operation or notifies an administrator of the refrigeration cycle device.

Abstract: An object of the present invention is to provide a multilayer wiring substrate for probe card capable of preventing deterioration of a thin film resistor 30.

Abstract: A thermal printer of an embodiment includes: a main body; an opening and closing lid; a printing portion that includes a platen and a thermal head; a locking portion locks the opening and closing lid; a detection unit that detects a predetermined pressing state between the thermal head and the platen when a sensor detects a detection target portion; a controller that prohibits printing by the printing portion when the detection unit does not detect the predetermined pressing state; and a biasing member that biases the main body and the opening and closing lid in a direction in which the main body and the opening and closing lid are separated from each other so that the sensor does not detect the detection target portion in a state where the opening and closing lid is not locked to the locking portion.

Abstract: A label printer includes an under cover, a top cover, a label peel-off unit, an interfering member supporting member, an interfering member, and an interfered member. The top cover moves between a first position where the top cover is opened and a second position where the top cover is closed with respect to the under cover. The label peel-off unit moves between a third position where the label peel-off unit is opened and a fourth position where the label peel-off unit is closed with respect to the under cover. The interfering member abuts against an exterior member of the label peel-off unit. The interfered member is a part of the exterior member of the label peel-off unit, and protrudes toward an upstream side in the label conveyance direction and is at a position where the interfered member abuts against the interfering member.

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract: A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

Abstract: A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract: A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract: An optical disc apparatus includes: a light source; a power detection portion that detects optical power of light emitted from the light source; a temperature detection portion that detects an ambient temperature of the power detection portion; a storage portion in which information relating to a temperature drift characteristic of the power detection portion is stored; and a control portion that controls the optical power while performing a temperature correction relating to the power detection portion by using the information stored in the storage portion. In the optical disc apparatus, the information stored in the storage portion is updated.

Abstract: A process liquid supply mechanism for supplying a process liquid comprises a process liquid supply source for supplying a process liquid, a process liquid discharging nozzle for discharging the process liquid, a pipe connecting the process liquid supply source to the process liquid discharging nozzle, a pump mounted to the pipe for allowing the process liquid to be discharged from the process liquid discharging nozzle, a pressure sensor for detecting the pressure of the process liquid at a prescribed position intermediate between the pump and the process liquid discharging nozzle, and a controller for controlling the inner pressure of the pump based on the pressure value detected by the pressure sensor and the relationship obtained in advance between the pressure and the discharging rate of the process liquid such that the process liquid is discharged at a prescribed discharging rate.

Abstract: A process liquid supply mechanism for supplying a process liquid comprises a process liquid supply source for supplying a process liquid, a process liquid discharging nozzle for discharging the process liquid, a pipe connecting the process liquid supply source to the process liquid discharging nozzle, a pump mounted to the pipe for allowing the process liquid to be discharged from the process liquid discharging nozzle, a pressure sensor for detecting the pressure of the process liquid at a prescribed position intermediate between the pump and the process liquid discharging nozzle, and a controller for controlling the inner pressure of the pump based on the pressure value detected by the pressure sensor and the relationship obtained in advance between the pressure and the discharging rate of the process liquid such that the process liquid is discharged at a prescribed discharging rate.