Patents by Inventor Shinya Sonobe
Shinya Sonobe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10720752Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.Type: GrantFiled: July 10, 2018Date of Patent: July 21, 2020Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Shinya Sonobe, Hiroaki Yuto
-
Publication number: 20180316157Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.Type: ApplicationFiled: July 10, 2018Publication date: November 1, 2018Inventors: Akinori YONEDA, Shinya SONOBE, Hiroaki YUTO
-
Patent number: 10050411Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.Type: GrantFiled: October 22, 2015Date of Patent: August 14, 2018Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Shinya Sonobe, Hiroaki Yuto
-
Publication number: 20160118767Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.Type: ApplicationFiled: October 22, 2015Publication date: April 28, 2016Inventors: Akinori YONEDA, Shinya SONOBE, Hiroaki YUTO
-
Patent number: 8548023Abstract: A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.Type: GrantFiled: October 31, 2008Date of Patent: October 1, 2013Assignee: Nichia CorporationInventors: Shinya Sonobe, Shingo Masui
-
Patent number: 8358674Abstract: A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normType: GrantFiled: March 18, 2011Date of Patent: January 22, 2013Assignee: Nichia CorporationInventors: Shinya Sonobe, Shingo Masui, Takashi Miyoshi
-
Publication number: 20110235666Abstract: A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normType: ApplicationFiled: March 18, 2011Publication date: September 29, 2011Applicant: NICHIA CORPORATIONInventors: Shinya SONOBE, Shingo MASUI, Takashi MIYOSHI
-
Publication number: 20100278207Abstract: A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.Type: ApplicationFiled: October 31, 2008Publication date: November 4, 2010Applicant: NICHIA CORPORATIONInventors: Shinya Sonobe, Shingo Masui
-
Patent number: 7696522Abstract: A light emitting device including a light source and a light transforming 101 member containing a fluorescent substance for absorbing at least a part of a light emitted from the light source and for emitting a light having a different wavelength. The light source includes a plurality of semiconductor light emitting units 104, at least a part of which are covered with the light transforming member 101. A shielding member 102 between a first semiconductor light emitting unit 104a covered with the light transforming member 101 and a second semiconductor light emitting unit 104b which is adjacent to the semiconductor light emitting unit 104a.Type: GrantFiled: September 8, 2005Date of Patent: April 13, 2010Assignee: Koito Manufacturing Co., Ltd.Inventors: Masato Ono, Shinya Sonobe, Hiroyuki Ishida, Tsukasa Tokida
-
Patent number: 7436066Abstract: It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.Type: GrantFiled: October 6, 2005Date of Patent: October 14, 2008Assignee: Nichia CorporationInventors: Shinya Sonobe, Masakatsu Tomonari, Yoshiki Inoue
-
Publication number: 20070023777Abstract: It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.Type: ApplicationFiled: October 6, 2005Publication date: February 1, 2007Inventors: Shinya Sonobe, Masakatsu Tomonari, Yoshiki Inoue
-
Publication number: 20060055309Abstract: A light emitting device including a light source and a light transforming 101 member containing a fluorescent substance for absorbing at least a part of a light emitted from the light source and for emitting a light having a different wavelength. The light source includes a plurality of semiconductor light emitting units 104, at least a part of which are covered with the light transforming member 101. A shielding member 102 between a first semiconductor light emitting unit 104a covered with the light transforming member 101 and a second semiconductor light emitting unit 104b which is adjacent to the semiconductor light emitting unit 104a.Type: ApplicationFiled: September 8, 2005Publication date: March 16, 2006Inventors: Masato Ono, Shinya Sonobe, Hiroyuki Ishida, Tsukasa Tokida
-
Patent number: 6977395Abstract: A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.Type: GrantFiled: July 12, 2002Date of Patent: December 20, 2005Assignee: Nichia CorporationInventors: Motokazu Yamada, Shinya Sonobe, Masahiko Sano
-
Patent number: 6921928Abstract: In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.Type: GrantFiled: October 2, 2003Date of Patent: July 26, 2005Assignee: Nichia CorporationInventor: Shinya Sonobe
-
Publication number: 20040195579Abstract: In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.Type: ApplicationFiled: October 2, 2003Publication date: October 7, 2004Inventor: Shinya Sonobe
-
Publication number: 20040026702Abstract: In a semiconductor device wherein at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type are layered on a substrate, and electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type; and a first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, respectively, and the second electrode surrounds the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed, inside from the outline of the first electrode.Type: ApplicationFiled: June 2, 2003Publication date: February 12, 2004Inventors: Motokazu Yamada, Shinya Sonobe, Masahiko Sano