Abstract: A circuit pattern is obtained, capable of being easily applicable to current increase, making short circuit or ion migration between adjacent circuit conductors hard to be generated, and allowing a circuit pattern to be tightly arranged. A circuit pattern comprises a circuit conductor to be layered on a metal substrate through an insulating layer, an intermediate portion in a layer direction having a swelled shape in a layer-crossing direction in a cross section of the circuit conductor, and the swelled shape is formed by a gentle face in the layer direction.

Abstract: A grain oriented electrical steel sheet includes the texture aligned with Goss orientation. In the grain oriented electrical steel sheet, when (?1 ?1 ?1) and (?2 ?2 ?2) represent deviation angles of crystal orientations measured at two measurement points which are adjacent on the sheet surface and which have an interval of 1 mm, the boundary condition BA is defined as |?2??1|?0.5°, and the boundary condition BB is defined as [(?2??1)2+(?2??1)2+(?2??1)2]1/2?2.0°, the boundary which satisfies the boundary condition BA and which does not satisfy the boundary condition BB is included.

Abstract: A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.

Abstract: A semiconductor device includes a substrate having a first surface, a first electrode, a second electrode and a third electrode formed on the first surface, a first semiconductor element and a second semiconductor element disposed in the interior of the substrate, a first wiring group electrically connecting the first electrode to the first semiconductor element, and a fourth wiring group electrically connecting the second semiconductor element to the second electrode. The first wiring group includes a first connection part disposed in the interior of the substrate. The fourth wiring group includes a second connection part disposed in the interior of the substrate. When a voltage is applied between the first electrode and the third electrode to cause current to flow through the second electrode, a direction of current flowing through first connection part is opposite to a direction of current flowing through the second connection part.

Abstract: The purpose of the present invention is to provide a protecting group which improves the solubility of a compound having a functional group protected with the protecting group in an organic solvent and which is easily separated and purified after a reaction with avoiding solidification or insolubilization.

Abstract: A method for producing 225A including: a method (X) for purifying a 226Ra-containing solution, including an adsorption step of allowing a 226Ra ion to adsorb onto a carrier having a function of selectively adsorbing a divalent cation by bringing a 226Ra-containing solution into contact with the carrier under an alkaline condition, and an elution step of eluting the 226Ra ion from the carrier under an acidic condition; a method for producing a 226Ra target, including an electrodeposition liquid preparation step of preparing an electrodeposition liquid by using a purified 226Ra-containing solution obtained by the method (X), and an electrodeposition step of electrodepositing a 226Ra-containing substance on a substrate by using the electrodeposition liquid; and a step of irradiating a 226Ra target produced by the method for producing a 226Ra target with at least one selected from a charged particle, a photon, and a neutron by using an accelerator.

Abstract: Provided is an alkyldiphenylmethane protective agent, which can prevent solidification or insolubilization of a compound by protecting a functional group of the compound to achieve easy separation and purification after a reaction.

Abstract: A grain-oriented electrical steel sheet having a metallographic structure after secondary-recrystallized annealing including matrix grains of Goss-oriented secondary recrystallized grains, wherein an existence frequency of Goss-oriented crystal grains having a major diameter of 5 mm or less in the matrix grains is 1.5 grains/cm2 or more and 8 grains/cm2 or less, and the magnetic flux density B8 is 1.88 T or more, and wherein deviation angles from a rolling direction of [001] direction of the Goss-oriented crystal grains having the major diameter of 5 mm or less are 7? or less and 5° or less, in terms of a simple or arithmetic average of ? angle and ? angle, respectively, wherein the ? angle represents an angle formed by a longitudinal direction and a projection of the [001] on a specimen surface, and the ? angle represents a tilt of the [001] out of the specimen surface.

Abstract: An object of the present invention is to provide a method for purifying efficiently and easily a 226Ra-containing solution obtained when 225Ac is produced from a 226Ra target, a method for producing a 226Ra target by using the purified 226Ra-containing solution obtained by the above purification method, and a method for producing 225Ac including these above methods. The method for purifying a 226Ra-containing solution according to the present invention is characterized by including an adsorption step (R1) of allowing 226Ra ions to adsorb onto a carrier having a function of selectively adsorbing divalent cations by bringing a 226Ra-containing solution (a) into contact with the carrier under an alkaline condition; and an elution step (R2) of eluting the 226Ra ions from the carrier under an acidic condition.

Abstract: One embodiment of the present invention relates to a production method of a 226Ra target, a production method of 225Ac, or an electrodeposition solution for producing a 226Ra target, and the production method of a 226Ra target includes an electrodeposition step of electrodepositing a 226Ra-containing substance on a substrate by using an electrodeposition solution that contains 226Ra ions and a pH buffer.

Abstract: An object of the present invention is to develop a protecting group, which can prevent solidification or insolubilization of a compound by protecting a functional group to achieve easy separation and purification after a reaction. A diphenylmethane compound represented by general formula (1): wherein Y represents —OR19 (wherein R19 represents a hydrogen atom or an active ester-type protecting group), —NHR20 (wherein R20 represents, for example, a hydrogen atom, a C1-6 linear or branched alkyl group, or an aralkyl group, at least one of R1 to R10 represents a group represented by formula (2): —O—R11—X-A??(2) and the others each independently represent a hydrogen atom, a halogen atom, a C1-4 alkyl group, or a C1-4 alkoxy group; R11 represents a C1-16 linear or branched alkylene group; X represents O or CONR21 (wherein R21 represents a hydrogen atom, or a C1-4 alkyl group; and A represents, for example, a group represented by formula (3).

Abstract: The purpose of the present invention is to provide a method for manufacturing a grain-oriented electrical steel sheet, whereby it becomes possible to manufacture a grain-oriented electrical steel sheet having further improved iron loss properties stably. (Solution) According to one aspect of the present invention, a method for manufacturing a grain-oriented electrical steel sheet is provided, the method being characterized by comprising a re-heating step, a hot rolling step, a hot-rolled sheet annealing step, a cold rolling step, a decarburization annealing step and a final annealing step, wherein the decarburization annealing step includes a heating step of heating a cold-rolled sheet from an inlet side temperature T0° C. to a soaking temperature T2° C. and a soaking step of keeping the temperature of the cold-rolled sheet at the soaking temperature T2° C., and the heating rate HR1 from the time point when the temperature of the cold-rolled sheet is an inlet side temperature T0° C.

Abstract: [Problem] To provide a grain-oriented electrical steel sheet which is further improved in terms of iron loss before magnetic domain control, while achieving a sufficient iron loss improvement effect even in the control of a heat-resistant magnetic domain where a sufficient iron loss improvement effect has not been achieved. [Solution] A grain-oriented electrical steel sheet according to one aspect of the present invention comprises abase steel sheet and a glass coating that is formed on the surface of the base steel sheet, and is characterized in that: the base steel sheet contains as chemical components, in mass %, 0.010% or less of C, from 2.00% to 4.00% of Si, from 0.05% to 1.00% of Mn, from 0.010% to 0.065% of Al, 0.004% or less of N and 0.

Abstract: One embodiment of the present invention relates to a production method of 225Ac includes; a production step of a 226Ra target including an electrodeposition step of electrodepositing a 226Ra-containing substance on a substrate by using an electrodeposition solution that contains 226Ra ions and a pH buffer, and an irradiating step of irradiating the 226Ra target with at least one selected from charged particles, photons, and neutrons.

Abstract: A method for producing 225A including: a method (X) for purifying a 226Ra-containing solution, including an adsorption step of allowing a 226Ra ion to adsorb onto a carrier having a function of selectively adsorbing a divalent cation by bringing a 226Ra-containing solution into contact with the carrier under an alkaline condition, and an elution step of eluting the 226Ra ion from the carrier under an acidic condition; a method for producing a 226Ra target, including an electrodeposition liquid preparation step of preparing an electrodeposition liquid by using a purified 226Ra-containing solution obtained by the method (X), and an electrodeposition step of electrodepositing a 226Ra-containing substance on a substrate by using the electrodeposition liquid; and a step of irradiating a 226Ra target produced by the method for producing a 226Ra target with at least one selected from a charged particle, a photon, and a neutron by using an accelerator.

Abstract: A grain oriented electrical steel sheet includes: a base steel sheet; a glass film which is arranged in contact with the base steel sheet; and an insulation coating which is arranged in contact with the glass film and which includes a phosphate and a colloidal silica as main components. The base steel sheet includes the predetermined chemical composition. A BN whose average particle size is 50 to 300 nm is included at a predetermined number density in a region which is from an interface between the glass film and the insulation coating till 5 ?m toward the base steel sheet in a depth direction. A B emission intensity obtained inside the glass film is more than a B emission intensity obtained inside the base steel sheet, when a B emission intensity is measured from a surface of the insulation coating by a glow discharge emission spectroscopy.

Abstract: A grain oriented electrical steel sheet includes: a base steel sheet; a lower layer which is arranged in contact with the base steel sheet; and an insulation coating which is arranged in contact with the lower layer and which includes a phosphate and a colloidal silica as main components. The base steel sheet includes the predetermined chemical composition and includes a B compound whose major axis length is 1 to 20 ?m and whose number density is 1×10 to 1×106 pieces/mm3. The lower layer is a glass film which includes a forsterite as main component or an intermediate layer includes a silicon oxide as main component.

Abstract: A semiconductor module includes: an upper arm module including a semiconductor chip; and a lower arm module including a semiconductor chip. The lower arm module is provided with: a facing section in which a lead frame and a lead frame each having a strip shape are disposed such that a main surface of the lead frame and a main surface of the lead frame face each other; and a non-facing section in which the lead frame and the lead frame are disposed such that the main surface of the lead frame and the main surface of the lead frame do not face each other.

Abstract: A power converter includes a plurality of inverter modules, each having a plurality of switching elements and each configured to convert a direct current voltage into an alternating current voltage by operations of the switching elements, a plurality of surge absorption circuits provided corresponding to the plurality of inverter modules and configured to absorb a generated surge voltage, and a plurality of current detection devices provided corresponding to the plurality of inverter modules, the current detection devices each having a current detection unit for detecting a current flowing in the corresponding inverter module.

Abstract: A semiconductor device includes a substrate having a first surface, a first electrode, a second electrode and a third electrode formed on the first surface, a first semiconductor element and a second semiconductor element disposed in the interior of the substrate, a first wiring group electrically connecting the first electrode to the first semiconductor element, and a fourth wiring group electrically connecting the second semiconductor element to the second electrode. The first wiring group includes a first connection part disposed in the interior of the substrate. The fourth wiring group includes a second connection part disposed in the interior of the substrate. When a voltage is applied between the first electrode and the third electrode to cause current to flow through the second electrode, a direction of current flowing through first connection part is opposite to a direction of current flowing through the second connection part.