Abstract: An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode.

Abstract: An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode.

Abstract: An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode.

Abstract: A thin-film transistor includes a semiconductor thin film provided on an insulating surface of a support substrate, a gate insulator provided on the semiconductor thin film, and a gate electrode layer formed on the semiconductor thin film with the gate insulator interposed therebetween. The semiconductor thin film includes a channel region disposed below the gate electrode layer, and source and drain regions disposed on both sides of the channel region. The source region has an impurity concentration profile in which an impurity concentration is lowered from an interface with the gate insulator toward an interface with the support substrate in a thickness direction of the semiconductor thin film. The impurity concentration near the support substrate is lower than the impurity concentration near the gate insulator by a factor of 100 or more in the impurity concentration profile of the source region.

Abstract: An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode.

Abstract: There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Abstract: There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Abstract: The present invention provides a perpendicular magnetic recording medium 11 having a perpendicular magnetization film 22 formed on a substrate 20, wherein a high perpendicular orientation film 24 having higher perpendicular orientation than that of the perpendicular magnetization film 22 is formed over or/and under the perpendicular magnetization film 22.

Abstract: A semiconductor apparatus in which a substantially entire channel region being a partial depletion type comprises a semiconductor layer provided on one surface side of a substrate, a channel region having a first electroconductive type provided in the semiconductor layer, a high-concentration diffusion region having a second electroconductive type provided in the semiconductor layer being adjacent to the channel region, facing both sides of the channel region, and being separated, a body terminal having the first electroconductive type which is connected with the channel region to fix a potential of the channel region, an insulator provided on the channel region, a gate electrode provided on the insulator to cover the channel region, and a channel edge portion disposed at an end portion of the channel region and also at an end portion of the semiconductor layer, and containing an impurity having the first electroconductive type therein.

Abstract: There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Abstract: A water-repellent/oil-repellent material that is decomposed to disappear by light irradiation is used to eliminate a water-repellent/oil-repellent layer on ITO electrodes. By forming light emitting layers in regions subjected to the elimination, patterning is carried out.

Abstract: A light emitting device and the production method thereof are provided, which are characterized by low manufacturing costs, low power consumption, and high luminous efficiency. The production method comprises processes of forming a transparent electrode layer above a transparent substrate in order to supply current to a luminous material layer, forming the luminous material layer emitting light by supplying the current thereto on the transparent electrode layer, and forming a reflecting electrode layer on the luminous material layer in order to supply current to the luminous material layer. A plurality of opening is formed in the transparent electrode layer with a predetermined pattern. By the openings, slope sections are formed in the luminous material layer and the reflecting electrode layer. Thereby, it is possible to increase the luminous efficiency of the light emitting device.

Abstract: An emitting device in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it are disclosed. The pattern of the transparent electrode is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode. The pattern of the transparent electrode is made larger than that of the luminous layer. The pattern of the transparent electrode is formed over the entire area of that of the luminous layer.

Abstract: An organic electroluminescence device is provided which is capable of providing light emission lasting time that can be practically used, that is, of improving its light emission life. A light emitting body used in the organic electroluminescence device is made up of a lower electrode layer, a light emitting layer and a transparent electrode layer being stacked in order on a substrate. As a material for the transparent electrode layer, a substance “In2-xSnxO3-y” being a mixture of an oxide of indium with tin is employed as its chief component. A material having hygroscopicity is formed adjacent to the transparent electrode layer. Light emitting element portion made up of the electrode and light emitting material layer is the electroluminescence device.

Abstract: The present invention provides a perpendicular magnetic recording medium 11 having a perpendicular magnetization film 22 formed on a substrate 20, wherein a high perpendicular orientation film 24 having higher perpendicular orientation than that of the perpendicular magnetization film 22 is formed over or/and under the perpendicular magnetization film 22.

Abstract: An organic electroluminescence device is provided which is capable of providing light emission lasting time that can be practically used, that is, of improving its light emission life. A light emitting body used in the organic electroluminescence device is made up of a lower electrode layer, a light emitting layer and a transparent electrode layer being stacked in order on a substrate. As a material for the transparent electrode layer, a substance “In2-xSnxO3-y” being a mixture of an oxide of indium with tin is employed as its chief component. A material having hygroscopicity is formed adjacent to the transparent electrode layer. Light emitting element portion made up of the electrode and light emitting material layer is the electroluminescence device.

Abstract: The present invention provides a perpendicular magnetic recording medium 11 having a perpendicular magnetization film 22 formed on a substrate 20, wherein a high perpendicular orientation film 24 having higher perpendicular orientation than that of the perpendicular magnetization film 22 is formed over or/and under the perpendicular magnetization film 22.

Abstract: A light emitting device and the production method thereof are provided, which are characterized by low manufacturing costs, low power consumption, and high luminous efficiency. The production method comprises processes of forming a transparent electrode layer above a transparent substrate in order to supply current to a luminous material layer, forming the luminous material layer emitting light by supplying the current thereto on the transparent electrode layer, and forming a reflecting electrode layer on the luminous material layer in order to supply current to the luminous material layer. A plurality of opening is formed in the transparent electrode layer with a predetermined pattern. By the openings, slope sections are formed in the luminous material layer and the reflecting electrode layer. Thereby, it is possible to increase the luminous efficiency of the light emitting device.

Abstract: It is intended to reduce the media noise, and to improve the recording density dependence of read output voltage. The present invention provides a perpendicular magnetic recording media and its manufacturing process, wherein a perpendicular magnetic recording medium comprises a soft magnetic underlayer film and a perpendicular magnetizing film, these films being formed on a substrate in this order, a smoothness control film such as Cr film, being inserted between the substrate and the soft magnetic underlayer film. Therefore, perpendicular orientation and surface smoothness are improved for the perpendicular magnetizing film laminated on the smooth surface of the soft magnetic underlayer film. As the perpendicular orientation is improved for the perpendicular magnetizing film, the initial layer is reduced, thereby media noise being lowered and recording density dependence of read output voltage being improved.

Abstract: A thermal stability measuring method for a magnetic recording medium includes heating the magnetic recording medium, reproducing an information recorded on the magnetic recording medium, and measuring a thermal stability according to a reproduction output during the heating.