Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A light-emitting device is provided. The light-emitting device includes a light-emitting unit and a light-conversion structure disposed on the light-emitting unit, wherein the light-conversion structure includes a quantum dot layer and an etching blocking layer disposed on one of the surfaces of the quantum dot layer.

Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.

Abstract: A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A light-emitting device includes a substrate, a plurality of light-emitting diode (LED) dies, a first reflection layer, and a second reflection layer. The LED dies are on the substrate. The first reflection layer is on the LED dies. The second reflection layer is on the first reflection layer. The first reflection layer is configured to reflect a waveband of light emitted from the LED dies. The second reflection layer is configured to reflect a laser waveband, wherein the wavelength of the laser waveband is less than 420 nm.

Abstract: A light-emitting device includes a micro light-emitting diode chip (micro LED chip), a first electrical connecting layer, a second electrical connecting layer and a housing layer. The micro LED chip includes a light exit surface, a bottom surface opposite to the light exit surface and first and second electrodes located on the bottom surface. The first and second electrical connecting layers respectively connect to the first and second electrodes and extend along two opposite sidewalls to two sides of a perimeter of the light exit surface. The housing layer encloses the micro LED chip and the first and second electrical connecting layer. The light exit surface of the micro LED chip and top surfaces of the first and second electrical connecting layers are not enclosed by the housing layer.

Abstract: A package structure is provided. The package structure has a light-emitting region and a non-light-emitting region that is adjacent to the light-emitting region, and includes a substrate, a first light-emitting layer, a second light-emitting layer and a third light-emitting layer. The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are sequentially stacked on the substrate. Each of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer includes a transparent adhesive layer disposed in the light-emitting region, a light-emitting diode (LED) chip disposed on the transparent adhesive layer, a redistribution layer formed on the LED chip and extending from the light-emitting region to the non-light-emitting region, and a planarization layer disposed on the LED chip and the redistribution layer.

Abstract: Embodiments provide a micro light-emitting diode package structure and a method for forming the same. The micro light-emitting diode package structure includes a redistribution layer, a control device, micro light-emitting diodes, and a flexible material layer. The control device and the micro light-emitting diodes are disposed on and electrically connected to the redistribution layer. The flexible material layer covers the control device and the micro light-emitting diodes, wherein the micro light-emitting diodes are in contact with the flexible material layer.

Abstract: A light-emitting diode structure for improving bonding yield is provided, which includes a light-emitting diode, a plurality of contact electrodes, an insulating layer structure, and a plurality of bonding electrodes. One surface of the light-emitting diode includes a mesa structure. The contact electrodes are on the mesa structure. The bonding electrodes are on the insulating layer structure and respectively cover at least one contact electrode. A surface of one of the bonding electrodes facing away from the light-emitting diode has a first platform and a second platform. The second platform is on the first platform. A surface area of a vertical projection of the second platform on the light-emitting diode is smaller than that of the first platform on the light-emitting diode, and said vertical projection of the second platform is within that of the first platform.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A package structure, a display device, and manufacturing methods thereof are provided. A package structure includes a conductive element, a first dielectric layer, a redistribution layer, a second dielectric layer, a light-shielding layer, a conductive layer, and a light-emitting diode unit. The first dielectric layer is disposed on the conductive element. The redistribution layer is disposed on the first dielectric layer. The redistribution layer is electrically connected to the conductive element. The second dielectric layer is disposed on the first dielectric layer. The light-shielding layer is disposed on the second dielectric layer. The conductive layer is disposed on the redistribution layer and includes a first conductive portion with a light reflectivity of less than 30%. The light-emitting diode unit is disposed on the conductive layer.

Abstract: A light-emitting element includes a first reflection layer, a second reflection layer, a multi-layer light-emitting structure, and a light-transmitting semiconductor layer. The first reflection layer has a first reflectance, and the second reflection layer has a second reflectance greater than the first reflectance. The multi-layer light-emitting structure is between the first reflection layer and the second reflection layer. The light-transmitting semiconductor layer is located on the first reflection layer and has an upper light-extracting surface, and the first reflection layer is closer to the upper light-extracting surface than the second reflection layer. An interval between the upper light-extracting surface and the first reflection layer is equal to or smaller than 5 ?m.

Abstract: A light-emitting diode chip includes a semiconductor layer, an insulating layer, a first and a second electrode. The semiconductor layer has a top side, a bottom side opposite to the top side and a sidewall connecting the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer. The insulating layer covers the sidewall and the bottom side of the semiconductor layer, and has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall. A vertical distance between a highest point of the concave-convex structure and that of the protruding portion is from 0.5 ?m to four times the thickness of the semiconductor layer. The first and the second electrode are on the bottom side of the semiconductor layer and penetrate through the insulating layer. The second electrode is adjacent to the first electrode.

Abstract: A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.

Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer and a pick-up layer. The first type semiconductor layer and the second type semiconductor layer are located on two opposite sides of the active layer respectively. The pick-up layer is located on the second type semiconductor layer, wherein the pick-up layer has a patterned outer surface to serve as a grabbed surface during transferring.

Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.

Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.

Abstract: A light emitting device includes a first light emitting cell and a second light emitting cell. Each light emitting cell includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers. The second semiconductor layer of the second light emitting cell has an exposed surface. A transparent bonding layer is located between the first and second light emitting cells. A hole is formed on the first and second light emitting cells and the transparent bonding layer. A first route metal is located on a sidewall of the hole and electrically coupled to the second semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting cell. The active layer of the second light emitting cell has an area greater than the active layer of the first light emitting cell.