Abstract: An electrode plate stacking method includes: determining, based on a first electrode plate, a conveying order of a plurality of second electrode plates, the first electrode plate being a continuous electrode plate, the plurality of second electrode plates including at least one upper electrode plate and at least one lower electrode plate, the plurality of second electrode plates being discontinuous electrode plates, and the conveying order being used for conveying the at least one upper electrode plate and the at least one lower electrode plate alternately; generating an identifier sequence for the plurality of second electrode plates based on the conveying order; and collecting first image data of each of the plurality of second electrode plates based on the identifier sequence in a process of conveying the plurality of second electrode plates in the conveying order.

Abstract: A method to improve the MOCVD reaction by protection film on the stainless steel body in the MOCVD reaction chamber. The film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. The film is a compound of at least one of Al, Ga and Mg and at least one of oxygen or nitrogen, or other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. The film could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has compact organization with porosity of less than 1%, and thickness of 1 nm to 0.5 mm.

Abstract: The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm.

Abstract: The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm.

Abstract: Structures and fabrication processes are described for group III-nitride enhancement mode field effect devices in which a two-dimensional electron gas is present at or near the interface between a pair of active layers that include a group III-nitride barrier layer and a group III-nitride semiconductor layer. The barrier layer has a band gap wider than the band gap of the adjacent underlying semiconductor layer. The two-dimensional electron gas is induced by providing one or more layers disposed over the barrier layer. A gate electrode is in direct contact with the barrier layer. Ohmic contacts for source and drain electrodes are in direct contact either with the barrier layer or with a semiconductor nitride layer disposed over the barrier layer.

Abstract: Structures and fabrication processes are described for group III-nitride enhancement mode field effect devices in which a two-dimensional electron gas is present at or near the interface between a pair of active layers that include a group III-nitride barrier layer and a group III-nitride semiconductor layer. The barrier layer has a band gap wider than the band gap of the adjacent underlying semiconductor layer. The two-dimensional electron gas is induced by providing one or more layers disposed over the barrier layer. A gate electrode is in direct contact with the barrier layer. Ohmic contacts for source and drain electrodes are in direct contact either with the barrier layer or with a semiconductor nitride layer disposed over the barrier layer.

Abstract: A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

Abstract: A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

Abstract: A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1−R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.