Patents by Inventor Shiro Takeda

Shiro Takeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967976
    Abstract: To reduce data amount while ensuring tactile reproducibility of a two-dimensional tactile signal, and improve the efficiency of a system related to tactile reproduction. Coding is performed to compress information amount by orthogonally transforming a two-dimensional tactile signal based on a time signal. By orthogonally transforming a two-dimensional tactile signal based on a time signal, it is possible to compress information amount by removing frequency components that are difficult for humans to perceive, as in the case of an image signal, for example. Accordingly, it is possible to reduce data amount while ensuring tactile reproducibility of a two-dimensional tactile signal, and improve the efficiency of a system related to tactile reproduction.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: April 23, 2024
    Assignee: Sony Corporation
    Inventors: Jun Matsumoto, Shiro Suzuki, Shuichiro Nishigori, Hirofumi Takeda
  • Patent number: 11947723
    Abstract: Provided is a decoding device including a decoding unit configured to decode a plurality of pieces of encoded data on the basis of encoding method information that has been received, received bitstream data including the plurality of pieces of encoded data in which a plurality of segments of a tactile signal has been respectively encoded, in which the encoding method information includes information indicating in which encoding method of a plurality of encoding methods the respective segments of the tactile signal have been encoded, the plurality of encoding methods includes a simple tactile encoding method corresponding to a simple tactile signal related to a beginning segment of the tactile signal, the plurality of pieces of encoded data includes simple tactile encoded data in which the simple tactile signal has been encoded in the simple tactile encoding method, and the decoding unit decodes the simple tactile encoded data, in a case where the encoding method information indicates the simple tactile encodi
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: April 2, 2024
    Assignee: Sony Group Corporation
    Inventors: Hirofumi Takeda, Shuichiro Nishigori, Takuma Domae, Toshiyuki Nakagawa, Shiro Suzuki, Takahiro Watanabe
  • Patent number: 11922797
    Abstract: To reduce a data amount required for tactile presentation while enabling driving of different types of tactile presentation devices corresponding to different physical amounts. An encoding device according to the present technology is provided with an encoding unit that generates coded data by performing encoding to compress an information amount by utilizing an interconversion property between physical amounts on a plurality of tactile signals representing different physical amounts. This makes it possible to obtain the tactile signals representing desired physical amounts within a range in which interconversion may be performed while compressing the information amount by utilizing the interconversion property between the physical amounts.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: March 5, 2024
    Assignee: Sony Corporation
    Inventors: Hirofumi Takeda, Shiro Suzuki, Shuichiro Nishigori, Jun Matsumoto
  • Patent number: 8181820
    Abstract: A mechanism for opening and closing an opening portion is disclosed. The mechanism can simply and reliably open and close the opening portion without requiring a spring but using a simple mechanism and can stably maintain the closed state of the opening portion. When the opening portion is closed by a lid, with the head end side of the opening and closing member being protruded from the opening portion, the head end of the opening and closing member makes contact with the surface of the lid which faces the inner side of the opening portion, causing the lid to rotate about one end thereof which is rotatably supported by a rotation supporting shaft. This changes the state of the opening portion from the closed state to the opened state.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: May 22, 2012
    Assignee: Takeda Brush Inc.
    Inventor: Shiro Takeda
  • Patent number: 8120049
    Abstract: A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: February 21, 2012
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Tetsuji Matsuo, Shiro Takeda
  • Publication number: 20100314392
    Abstract: A mechanism for opening and closing an opening portion is disclosed. The mechanism can simply and reliably open and close the opening portion without requiring a spring but using a simple mechanism and can stably maintain the closed state of the opening portion. When the opening portion is closed by a lid, with the head end side of the opening and closing member being protruded from the opening portion, the head end of the opening and closing member makes contact with the surface of the lid which faces the inner side of the opening portion, causing the lid to rotate about one end thereof which is rotatably supported by a rotation supporting shaft. This changes the state of the opening portion from the closed state to the opened state.
    Type: Application
    Filed: January 14, 2009
    Publication date: December 16, 2010
    Applicant: TAKEDA BRUSH INC.
    Inventor: Shiro Takeda
  • Patent number: 7566576
    Abstract: An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms.
    Type: Grant
    Filed: March 17, 2008
    Date of Patent: July 28, 2009
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Hitoshi Murofushi, Shiro Takeda
  • Patent number: 7560737
    Abstract: In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: July 14, 2009
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Hitoshi Murofushi, Shiro Takeda
  • Patent number: 7498609
    Abstract: An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: March 3, 2009
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Hitoshi Murofushi, Hidekazu Aoyagi, Shiro Takeda, Yoshihiko Uchida
  • Publication number: 20080315232
    Abstract: A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.
    Type: Application
    Filed: June 18, 2008
    Publication date: December 25, 2008
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventors: Tetsuji Matsuo, Shiro Takeda
  • Publication number: 20080166828
    Abstract: An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms.
    Type: Application
    Filed: March 17, 2008
    Publication date: July 10, 2008
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Hitoshi Murofushi, Shiro Takeda
  • Patent number: 7087933
    Abstract: A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: August 8, 2006
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Shiro Takeda, Hitoshi Murofushi
  • Publication number: 20060113544
    Abstract: A semiconductor light-emitting device comprises an elongated light transmitter 2; a pair of metallic heat sinks 4 disposed at both ends 2a of light transmitter 2 in a perpendicular relation to light transmitter 2. A linear light source comprises an elongated light transmitter 2 having an irradiation surface 2e; semiconductor light-emitting elements 3 for respectively emitting light into light transmitter 2 from both ends 2a thereof; and half-mirrors 20 mounted in light transmitter 2 for reflecting light emitted from light-emitting elements 3 toward the outside of light transmitter 2 through irradiation surface 2e. With these semiconductor light-emitting device and linear light source, light from the semiconductor light-emitting element as a point light source can be transformed into a linear light with the generally uniform luminance.
    Type: Application
    Filed: November 28, 2003
    Publication date: June 1, 2006
    Inventors: Koji Otsuka, Hitoshi Murofushi, Shiro Takeda
  • Publication number: 20060076565
    Abstract: In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.
    Type: Application
    Filed: September 20, 2005
    Publication date: April 13, 2006
    Inventors: Hitoshi Murofushi, Shiro Takeda
  • Publication number: 20060001032
    Abstract: An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture.
    Type: Application
    Filed: September 8, 2005
    Publication date: January 5, 2006
    Inventors: Hitoshi Murofushi, Hidekazu Aoyagi, Shiro Takeda, Yoshihiko Uchida
  • Publication number: 20050205886
    Abstract: An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms.
    Type: Application
    Filed: May 23, 2005
    Publication date: September 22, 2005
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Hitoshi Murofushi, Shiro Takeda
  • Publication number: 20050139842
    Abstract: Provided between a window layer and a protection layer is a light transmissive layer having a refraction index which is between the refraction indexes of the window layer and protection layer. The refraction index n2 of the light transmissive layer is, for example, within ±20% of the geometric average of the refraction indexes of the window layer and protection layer. The thickness T of the light transmissive layer satisfies {(?/4n2)×(2m+1)?(?/8n2)?T?(?/4n2)×(2m+1)+(?/8n2)} where ? represents the wavelength of emitted light and m represents a positive integer not smaller than 0.
    Type: Application
    Filed: December 27, 2004
    Publication date: June 30, 2005
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Hitoshi Murofushi, Shiro Takeda
  • Publication number: 20050110037
    Abstract: A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.
    Type: Application
    Filed: November 12, 2004
    Publication date: May 26, 2005
    Inventors: Shiro Takeda, Hitoshi Murofushi
  • Patent number: 6886571
    Abstract: A method of storing a cosmetic is capable of retrieving and storing a make up set and the cosmetic from a case by a single hand operation. The cosmetic is stored in a covered tubular case so as to be retrieved and stored and locked to the tubular case when projected and stored by the single hand operation. The cover of the tubular case is opened when the cosmetic is projected and closed when the cosmetic is stored.
    Type: Grant
    Filed: April 4, 2001
    Date of Patent: May 3, 2005
    Inventor: Shiro Takeda
  • Publication number: 20030145872
    Abstract: A method of storing a cosmetic capable of retrieving and storing a make up set and the cosmetic from a case by a single hand operation, characterized in that the cosmetic is stored in a covered tubular case so as to be retrieved and stored and locked to the tubular case when projected and stored by the single hand operation, and the cover of the tubular case is opened when the cosmetic is projected and closed when the cosmetic is stored.
    Type: Application
    Filed: February 11, 2003
    Publication date: August 7, 2003
    Inventor: Shiro Takeda