Abstract: A composition analysis method includes iteratively irradiating a sample with an ion beam, irradiating a specific portion of the sample that is thinned by the irradiation of the ion beam with an electron beam, and detecting an intensity of an X-ray generated from the sample by the irradiation of the electron beam. The method further includes determining an identity of an element included in the sample based on at least one detection result obtained in the iterative process.

Abstract: A composition analysis method includes iteratively irradiating a sample with an ion beam, irradiating a specific portion of the sample that is thinned by the irradiation of the ion beam with an electron beam, and detecting an intensity of an X-ray generated from the sample by the irradiation of the electron beam. The method further includes determining an identity of an element included in the sample based on at least one detection result obtained in the iterative process.

Abstract: The invention provides a method of determining a lattice constant of an arbitrary material such as a polycrystalline material speedily and easily, and a method of evaluating the stress and strain of the material speedily. According to the invention, the lattice constant of a standard sample is varied within a predetermined range and finds the HOLZ line pattern of the standard sample by calculation using an equation (y=f(x, a)=?(a)x+?(a)) and the data of the pattern is accumulated to form a data library. On the other hand, a test sample to be measured is irradiated and scanned with a convergent electron beam. Then, a developing HOLZ line pattern is compared with the HOLZ line pattern in the data library and the most similar HOLZ line pattern is selected. From the data of the lattice constant of the data library having the most similar HOLZ line pattern, the lattice constant of the test sample to be measured is determined.

Abstract: The invention provides a method of determining a lattice constant of an arbitrary material such as a polycrystalline material speedily and easily, and a method of evaluating the stress and strain of the material speedily. According to the invention, the lattice constant of a standard sample is varied within a predetermined range and finds the HOLZ line pattern of the standard sample by calculation using an equation (y=f(x, a)=&agr;(a)x+&bgr;(a)) and the data of the pattern is accumulated to form a data library. On the other hand, a test sample to be measured is irradiated and scanned with a convergent electron beam. Then, a developing HOLZ line pattern is compared with the HOLZ line pattern in the data library and the most similar HOLZ line pattern is selected. From the data of the lattice constant of the data library having the most similar HOLZ line pattern, the lattice constant of the test sample to be measured is determined.

Abstract: There is provided a hydrogen-absorbing alloy comprising at least one crystal phase consisting essentially of at least one unit cell which has a laminate structure comprising at least one A2B4 subcell and at least one AB5 subcell, and the aforementioned at least one unit cell satisfying the following formula (1), 0.5<X<1  (1) wherein A is at least one kind of element which is capable of generating heat of formation &Dgr;H (kJ/mol) of less than 20 kJ/mol at the occasion of generating a hydride from one mole of hydrogen at a temperature of 25° C., B is at least one kind of element which is capable of generating heat of formation &Dgr;H (kJ/mol) of not less than 20 kJ/mol at the occasion of generating a hydride from one mole of hydrogen at a temperature of 25° C., and X is a ratio in number of the aforementioned at least one A2B4 subcell to the aforementioned at least one AB5 subcell.

Abstract: Disclosed are a method and an apparatus for detecting a defect in a dielectric film. The dielectric film is electrified in an electrolyte solution containing a metal in such a manner the dielectric film is charged negative, thereby the metal is deposited on the dielectric film at a position corresponding to the defect. The detecting method has a first deposition step for forming a first metal deposit on the dielectric film in an annular form surrounding the position corresponding to the defect; and a second deposition step for forming a second metal deposit located on the position corresponding to the defect, on the dielectric film. The detecting apparatus has a vessel for accommodating the electrolyte solution; a first electrode for electrifying the dielectric film and a second electrode; and an electric power source for controlably applying a voltage to electrifying between the first electrode and the second electrode in which a value and a direction of the applied voltage is variable.

Abstract: There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C.

Abstract: An electron-beam lithography system employing an "electron holography" technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.