Abstract: A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer according to a first plasma process recipe; collecting plasma process parameters including at least an RF power and a plasma process time at pre-determined time intervals; and, storing the plasma process parameters including pre-process plasma processing system parameters according to a selectively queryable database to create a plasma process history such that upon abortion of the plasma process the plasma process history may be selectively retrieved to determine a second plasma process recipe to complete the plasma process.

Abstract: A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer according to a first plasma process recipe; collecting plasma process parameters including at least an RF power and a plasma process time at pre-determined time intervals; and, storing the plasma process parameters including pre-process plasma processing system parameters according to a selectively queryable database to create a plasma process history such that upon abortion of the plasma process the plasma process history may be selectively retrieved to determine a second plasma process recipe to complete the plasma process.