Patents by Inventor Shirou Isoda

Shirou Isoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6104461
    Abstract: An inorganic layer such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is interposed between a pixel electrode and a black matrix that constitute a storage capacitor. This structure increases the capacitance per unit area.
    Type: Grant
    Filed: September 16, 1998
    Date of Patent: August 15, 2000
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Masayuki Sakakura, Shirou Isoda