Patents by Inventor Shiuan-Leh Lin
Shiuan-Leh Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136463Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.Type: ApplicationFiled: December 20, 2023Publication date: April 25, 2024Applicant: EPISTAR CORPORATIONInventors: Yi-Chieh LIN, Shiuan-Leh LIN, Yung-Fu CHANG, Shih-Chang LEE, Chia-Liang HSU, Yi HSIAO, Wen-Luh LIAO, Hong-Chi SHIH, Mei-Chun LIU
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Patent number: 11935969Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.Type: GrantFiled: November 9, 2020Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Shih-Chang Lee, Shiuan-Leh Lin, I-Hung Chen, Chu-Jih Su, Chao-Shun Huang
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Patent number: 11894481Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.Type: GrantFiled: October 26, 2021Date of Patent: February 6, 2024Assignee: EPISTAR CORPORATIONInventors: Yi-Chieh Lin, Shiuan-Leh Lin, Yung-Fu Chang, Shih-Chang Lee, Chia-Liang Hsu, Yi Hsiao, Wen-Luh Liao, Hong-Chi Shih, Mei-Chun Liu
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Patent number: 11335826Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.Type: GrantFiled: June 30, 2020Date of Patent: May 17, 2022Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chao-Shun Huang, Shiuan-Leh Lin, Shih-Chang Lee, Wen-Luh Liao, Mei-Chun Liu
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Publication number: 20220059717Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.Type: ApplicationFiled: October 26, 2021Publication date: February 24, 2022Applicant: EPISTAR CORPORATIONInventors: Yi-Chieh LIN, Shiuan-Leh LIN, Yung-Fu CHANG, Shih-Chang LEE, Chia-Liang HSU, Yi HSIAO, Wen-Luh LIAO, Hong-Chi SHIH, Mei-Chun LIU
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Publication number: 20210408310Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Chu-Jih Su, Chao-Shun Huang, Shiuan-Leh Lin, Shih-Chang Lee, Wen-Luh Liao, Mei-Chun Liu
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Patent number: 11158757Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.Type: GrantFiled: November 27, 2019Date of Patent: October 26, 2021Assignee: EPISTAR CORPORATIONInventors: Yi-Chieh Lin, Shiuan-Leh Lin, Yung-Fu Chang, Shih-Chang Lee, Chia-Liang Hsu, Yi Hsiao, Wen-Luh Liao, Hong-Chi Shih, Mei-Chun Liu
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Publication number: 20210151612Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.Type: ApplicationFiled: November 9, 2020Publication date: May 20, 2021Inventors: Shih-Chang Lee, Shiuan-Leh Lin, I-Hung Chen, Chu-Jih Su, Chao-Shun Huang
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Publication number: 20200168757Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.Type: ApplicationFiled: November 27, 2019Publication date: May 28, 2020Inventors: Yi-Chieh LIN, Shiuan-Leh LIN, Yung-Fu CHANG, Shih-Chang LEE, Chia-Liang HSU, Yi HSIAO, Wen-Luh LIAO, Hong-Chi SHIH, Mei-Chun LIU
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Patent number: 9954140Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 ?.Type: GrantFiled: May 16, 2017Date of Patent: April 24, 2018Assignee: Epistar CorporationInventors: Chien-Fu Huang, Shiuan-Leh Lin, Chih-Chiang Lu, Chia-Liang Hsu
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Patent number: 9793454Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.Type: GrantFiled: January 11, 2016Date of Patent: October 17, 2017Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Shiuan-Leh Lin, Chih-Chiang Lu, Chia-Liang Hsu
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Publication number: 20170250310Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 ?.Type: ApplicationFiled: May 16, 2017Publication date: August 31, 2017Inventors: Chien-Fu HUANG, Shiuan-Leh LIN, Chih-Chiang LU, Chia-Liang HSU
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Patent number: 9525101Abstract: An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.Type: GrantFiled: April 21, 2014Date of Patent: December 20, 2016Assignee: EPISTAR CORPORATIONInventors: Shiuan-Leh Lin, Shih-Chang Lee
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Publication number: 20160126433Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.Type: ApplicationFiled: January 11, 2016Publication date: May 5, 2016Inventors: Chien-Fu HUANG, Shiuan-Leh LIN, Chih-Chiang LU, Chia-Liang HSU
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Patent number: 9269870Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.Type: GrantFiled: September 27, 2013Date of Patent: February 23, 2016Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Shiuan-Leh Lin, Chih-Chiang Lu, Chia-Liang Hsu
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Publication number: 20150179857Abstract: An optoelectronic device comprises a substrate; a converting structure for converting energy between light and electric current over the substrate; and a semiconductor buffer layer combination between the substrate and the converting structure, the semiconductor buffer layer combination comprising multiple first semiconductor layers and multiple second semiconductor layers alternately stacked, wherein each of the multiple first semiconductor layers comprises a first element, each of the multiple second semiconductor layers comprises a second element different from the first element, and the composition ratio of the first element gradually increases or decreases with an increase of the distance between the first semiconductor layers and the substrate.Type: ApplicationFiled: February 26, 2015Publication date: June 25, 2015Inventor: Shiuan-Leh LIN
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Patent number: 9040342Abstract: A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.Type: GrantFiled: September 7, 2012Date of Patent: May 26, 2015Assignee: EPISTAR CORPORATIONInventor: Shiuan-Leh Lin
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Patent number: 9035280Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.Type: GrantFiled: August 20, 2013Date of Patent: May 19, 2015Assignee: EPISTAR CORPORATIONInventors: Rong-Ren Lee, Chien-Fu Huang, Shih-Chang Lee, Yi-Ming Chen, Shiuan-Leh Lin
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Publication number: 20140312370Abstract: An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.Type: ApplicationFiled: April 21, 2014Publication date: October 23, 2014Applicant: EPISTAR CORPORATIONInventors: Shiuan-Leh LIN, Shih-Chang LEE
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Publication number: 20140069489Abstract: A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.Type: ApplicationFiled: September 7, 2012Publication date: March 13, 2014Inventor: Shiuan-Leh LIN