Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: A polymorphic lithium-silicon compounds for use in pure silicon anode of lithium-ion battery and use thereof are provided. The pure silicon anode includes nucleuses which have one or more structures of Li4.1Si_Cmcm, Li13Si4_Pbam, Li2Si_C12m1, and LiSi_I41/AZ. It was generally believed Li4.1Si_Cmcm to be a high-temperature stable phase, not presenting at room temperature or in the pure silicon anode of lithium-ion battery, but this present invention proves that Li4.1Si_Cmcm can exist in the disclosed material. After lithiation process, the pure silicon anode can have a structure of one or more of Li4.1Si_Cmcm, Li13Si4_Pbam, Li2Si_C12m1, and LiSi_I41/AZ, with extremely improved capacity. The present disclosure may increase the electrical capacity of the pure silicon anode in actual use and solve the problem of the existing pure silicon anode that the volume expansion after repeated lithiation and delithiation leads to electrode damage and battery failure.

Abstract: A video processing method utilized in a video data processing device for processing video data is disclosed. The video data includes at least a first video data set, and the video data processing device has a memory and a video decoder. The method includes utilizing the video decoder to decode the video data for generating a display data set, driving the video decoder to select a specific video data set from the first video data set wherein the display data set does not have display data corresponding to the specific video data set, and utilizing the memory to store the display data.

Abstract: A video processing method utilized in a video data processing device for processing video data is disclosed. The video data includes at least a first video data set, and the video data processing device has a memory and a video decoder. The method includes utilizing the video decoder to decode the video data for generating a display data set, driving the video decoder to select a specific video data set from the first video data set wherein the display data set does not have display data corresponding to the specific video data set, and utilizing the memory to store the display data.