Abstract: The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.

Abstract: A Mueller-matrix microscope, including: a polarizing unit and an analyzing unit. The polarizing unit is configured to modulate a light beam emitted from an external light source module to yield a polarized light beam, and then to project the polarized light beam on the surface of a sample to be measured. The analyzing unit is configured to analyze the polarization state of a light beam reflected from the surface of the sample, to acquire information of the sample. The analyzing unit includes a polarization state analyzer (PSA) and a backside reflection suppression (BRS) unit. The PSA unit is configured to demodulate the polarization state of the light beam; and the BRS unit is configured to suppress the backside reflections from transparent substrate.

Abstract: A Mueller-matrix microscope, including: a polarizing unit and an analyzing unit. The polarizing unit is configured to modulate a light beam emitted from an external light source module to yield a polarized light beam, and then to project the polarized light beam on the surface of a sample to be measured. The analyzing unit is configured to analyze the polarization state of a light beam reflected from the surface of the sample, to acquire information of the sample. The analyzing unit includes a polarization state analyzer (PSA) and a backside reflection suppression (BRS) unit. The PSA unit is configured to demodulate the polarization state of the light beam; and the BRS unit is configured to suppress the backside reflections from transparent substrate.

Abstract: A device for measuring a large-area and massive scattered field in nanoscale. The device includes a polarization state generator disposed on an output optical path of a laser source, a polarization state analyzer operating to demodulate a polarized light beam emitted thereon, a first objective lens and a first lens disposed on an optical path of a sample stage, and a scanning mirror disposed on an optical path in front of or at the rear of the polarization state generator.

Abstract: A device for measuring a large-area and massive scattered field in nanoscale. The device includes a polarization state generator disposed on an output optical path of a laser source, a polarization state analyzer operating to demodulate a polarized light beam emitted thereon, a first objective lens and a first lens disposed on an optical path of a sample stage, and a scanning mirror disposed on an optical path in front of or at the rear of the polarization state generator.

Abstract: An alignment method for optical axes of a composite waveplate includes rotating a rotatable waveplate, which rotates about a central axis with respect to a fixed waveplate, and adjusting the rotation angle thereof until the differences between the spectral parameters of the composite waveplate and ideal spectral parameters are smaller than preset values.

Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.

Abstract: An alignment method for optical axes of a composite waveplate includes rotating a rotatable waveplate, which rotates about a central axis with respect to a fixed waveplate, and adjusting the rotation angle thereof until the differences between the spectral parameters of the composite waveplate and ideal spectral parameters are smaller than preset values.

Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.