Abstract: A method for manufacturing a semiconductor device includes providing a first integrated circuit element including a first semiconductor substrate and a first wiring layer, providing a second integrated circuit element including a second semiconductor substrate and a second wiring layer, bonding the first insulating layer and the second insulating layer to each other, and bonding the first electrode and the second electrode to each other. The first insulating layer contains an inorganic insulating material. A plurality of first openings recessed toward the first semiconductor substrate from a bonding surface bonded to the second insulating layer are provided at positions in the first insulating layer in the first wiring layer different from an arrangement position of the first electrode, and the plurality of first openings discontinuously surround the first electrode.

Abstract: A method for manufacturing a semiconductor device includes providing a first integrated circuit element including a first semiconductor substrate, a first insulating film, and a first electrode, providing a second integrated circuit element including a second semiconductor substrate, a second insulating film, and a second electrode, bonding the first insulating film and the second insulating film to each other, and bonding the first electrode and the second electrode to each other. The first insulating film includes a first inorganic insulating layer and a first organic insulating layer. The second insulating film includes a second inorganic insulating layer and a second organic insulating layer. The thickness of the first organic insulating layer is smaller than the thickness of the first inorganic insulating layer, and the thickness of the second organic insulating layer is smaller than the thickness of the second inorganic insulating layer.

Abstract: A method for manufacturing a semiconductor package, the method includes: (A) forming a temporary fixing material layer on the first surface (circuit exposed surface) of a panel member including a plurality of semiconductor packages, (B) attaching an adhesive film to the second surface of the panel member; (C) singulating the panel member and the temporary fixing material layer on the adhesive film to obtain a plurality of temporary fixing material piece-attached semiconductor packages; (D) arranging a plurality of the temporary fixing material piece-attached semiconductor packages on a support carrier so that the distance between the adjacent temporary fixing material piece-attached semiconductor packages is 0.1 mm or more; (E) peeling off the first adhesive film from the support carrier and the plurality of temporary fixing material piece-attached semiconductor packages; and (F) forming a functional layer on surfaces of the plurality of temporary fixing material piece-attached semiconductor packages.

Abstract: Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sect

Abstract: Provided is a photosensitive element including a support film, and a photosensitive layer provided on the support film and formed from a photosensitive resin composition, in which the surface roughness of the surface of the support film that is in contact with the photosensitive layer is 200 to 4,000 nm.

Abstract: Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sect

Abstract: Provided is a photosensitive element including a support film, and a photosensitive layer provided on the support film and formed from a photosensitive resin composition, in which the surface roughness of the surface of the support film that is in contact with the photosensitive layer is 200 to 4,000 nm.