Abstract: A method for producing silver nanoparticles according to the present invention includes the steps of: mixing an amine mixture and a silver compound to yield a complex compound; and heating and decomposing the complex compound to form silver nanoparticles. The amine mixture contains: a primary amine (A) having 8 or more carbon atoms and a melting point of 20° C. or lower; a diamine (B) having a primary amino group, a tertiary amino group, 4 or more carbon atoms, and a melting point of 20° C. or lower; and a cis-unsaturated primary amine (C) having 12 or more carbon atoms and a melting point of 30° C. or lower.

Abstract: A benzobis(thiadiazole) derivative represented by the following general formula (1): in which R1 represents a linear or branched alkyl group, or any one of the groups of the following formula (2): in which R represents a linear or branched alkyl group; R2 represents a hydrogen atom; and R3 represents a hydrogen atom, a linear or branched alkyl group, or any one of the groups of the formula (2); with the proviso that at least one of R1 and R3 represents any one of the groups of the formula (2); and two R1 groups, two R2 groups, and two R3 groups may be the same as, or different from each other.

Abstract: A benzobis(thiadiazole) derivative represented by the formula (1): in which R represents a group containing at least one fluorine atom (with the proviso that fluorine atom (F) and trifluoromethyl group (—CF3) are excluded), and m represents an integer of from 1 to 10.

Abstract: Provided is a thin film transistor in which at least a support, source and drain electrodes constituted by a conductor, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated in this order. In a laminated cross section of the thin film transistor, a difference between an electrode width of an electrode on a face coming into contact with the support and an electrode width thereof on a face which is opposite to the face coming into contact with the support and comes into contact with the semiconductor layer falls within a range of ±1 ?m. When an arithmetic average roughness in the electrode width of the electrode on the face which is opposite to the face coming into contact with the support and comes into contact with the semiconductor layer is set to Ra, the relation of Ra?10 nm is satisfied.

Abstract: Provided is a method of manufacturing a thin film transistor satisfying the relation of L<5 ?m. The method includes a process of forming a streak portion by performing transfer printing on a support using a member to be transferred which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A?0.05.

Abstract: A benzobis(thiadiazole) derivative represented by the formula (1): in which R represents a group containing at least one fluorine atom (with the proviso that fluorine atom (F) and trifluoromethyl group (—CF3) are excluded), and m represents an integer of from 1 to 10.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: An organic thin-film transistor having a higher carrier-mobility, a method of fabricating the organic thin-film transistor and an organic thin-film device including the organic thin-film transistor are provided. In an organic thin-film transistor having an organic semiconductor layer, the organic semiconductor layer contains a fluorinated acene compound which is represented by a formula of C4n+2F2n+4, wherein n is an integer of 2 or greater. The fluorinated acene compound is preferably tetradecafluoropentacene or dodecafluoronaphthacene.

Abstract: A flexible organic EL display of the present invention includes a plastic film, an adhesive layer and a lower insulating layer formed thereon, an organic EL element embedded in the lower insulating layer and constructed by forming a cathode, an organic EL layer, and an anode sequentially from a bottom, an upper insulating layer formed on the organic EL element, a TFT embedded in the upper insulating layer and constructed by forming an organic active layer, a source electrode and a drain electrode, a gate insulating layer, and a gate electrode sequentially from a bottom, and a via hole provided in the upper insulating layer and reaching the drain electrode of the TFT, wherein the anode is connected electrically to the drain electrode of the TFT via the via hole.

Abstract: A flexible organic EL display of the present invention includes a plastic film, an adhesive layer and a lower insulating layer formed thereon, an organic EL element embedded in the lower insulating layer and constructed by forming an anode, an organic EL layer, and a cathode sequentially from a bottom, an upper insulating layer formed on the organic EL element, a TFT embedded in the upper insulating layer and constructed by forming an oxide semiconductor layer, a source electrode and a drain electrode, a gate insulating layer, and a gate electrode sequentially from a bottom, and a via hole provided in the upper insulating layer and reaching the drain electrode of the TFT, wherein the cathode is connected electrically to the drain electrode of the TFT via the via hole.

Abstract: 4-Cyanocoumarin derivatives which have a distinct sensitivity to visible light, distinct luminescent ability, and satisfactory applicability for photochemical polymerization, dye lasers, and organic electroluminescent elements. Since most of the derivatives have a fluorescent maximum wavelength of 600 to 650 nm, particularly, 610 to 630 nm, they are extremely useful as luminescent agents for organic EL elements which emit visible light in a red-color region, and can be quite useful as luminescent agents in organic EL elements and laser-active substances in dye lasers, as well as luminous bodies as lighting sources for lighting devices, and information displays for visually displaying information.

Abstract: An organic thin-film transistor having a higher carrier-mobility, a method of fabricating the organic thin-film transistor and an organic thin-film device including the organic thin-film transistor are provided. In an organic thin-film transistor having an organic semiconductor layer, the organic semiconductor layer contains a fluorinated acene compound which is represented by a formula of C4n+2F2n+4, wherein n is an integer of 2 or greater. The fluorinated acene compound is preferably tetradecafluoropentacene or dodecafluoronaphthacene.

Abstract: An organic polymeric phosphorescent compound and an organic light-emitting device employing the organic polymeric phosphorescent compound. The phosphorescent compound is a neutral organic polymeric phosphorescent compound emitting phosphorescence and used in an organic light-emitting device, and includes a phosphorescent unit and a carrier transporting unit.

Abstract: The invention provides electroluminescent (EL) elements, such that a red EL light source, a green EL light source and a blue EL light source emit red color light, green color light, and blue color light, respectively, and are disposed at the rear of liquid crystal display elements. Each EL light source includes an organic EL element in which an organic thin film emits light. Each EL light source has a structure in which an organic luminescent layer is sandwiched between an indium tin oxide (ITO) electrode and a metal electrode which have striped patterns which are orthogonal to each other, and sections (luminescent sections) at which the striped patterns of the ITO electrode and the metal electrode intersect with each other emit light. The luminescent sections are arrayed two-dimensionally on a glass substrate and illuminate the entire display area of the liquid crystal display element.