Patents by Inventor Sho Iwayama
Sho Iwayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9847449Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.Type: GrantFiled: December 1, 2015Date of Patent: December 19, 2017Assignees: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.Inventors: Kenjo Matsui, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki, Takanobu Akagi, Sho Iwayama
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Publication number: 20160163919Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.Type: ApplicationFiled: December 1, 2015Publication date: June 9, 2016Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.Inventors: Kenjo MATSUI, Tetsuya TAKEUCHI, Motoaki IWAYA, Isamu AKASAKI, Takanobu AKAGI, Sho IWAYAMA
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Patent number: 8816320Abstract: A GaN-containing semiconductor light emitting device includes: an n-type semiconductor layer formed of GaN-containing semiconductor, an active layer formed on the n-type semiconductor layer, formed of GaN-containing semiconductor, and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked alternately, and a p-type semiconductor layer formed on the active layer and formed of GaN-containing semiconductor, wherein: the barrier layers comprise: a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and formed of a GaN/AlGaN layer, and second barrier layers disposed nearer to the p-type semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of a InGaN sublayer and a GaN sublayer; and the well layers are each formed of an InGaN layer having a narrower band gap than that in the InGaN sublayer.Type: GrantFiled: January 17, 2013Date of Patent: August 26, 2014Assignee: Stanley Electric Co., Ltd.Inventors: Sho Iwayama, Masahiko Moteki
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Patent number: 8487285Abstract: In a deep-ultraviolet tight source includes sapphire substrate, a wide band gap semiconductor layer having a wavelength smaller than 300 nm, formed on the sapphire substrate, and en electron beam source for irradiating the wide band gap semiconductor layer with an electron beam. The wide band gap semiconductor layer is configured to be irradiated with the electron beam to emit deep-ultraviolet light through the sapphire substrate. A thickness t1 of the sapphire substrate satisfies: t1??·E3 is an energy of the electron beam (keV); and ? is 1 ?m/(keV)3.Type: GrantFiled: March 23, 2012Date of Patent: July 16, 2013Assignee: Stanley Electric Co., Ltd.Inventors: Takahiro Matsumoto, Sho Iwayama
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Patent number: 8338202Abstract: In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.Type: GrantFiled: March 19, 2009Date of Patent: December 25, 2012Assignee: Stanley Electric Co., Ltd.Inventors: Takako Chinone, Shinichi Tanaka, Sho Iwayama, Yusuke Yokobayashi, Satoshi Tanaka
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Publication number: 20120241651Abstract: In a deep-ultraviolet tight source includes sapphire substrate, a wide band gap semiconductor layer having a wavelength smaller than 300 nm, formed on the sapphire substrate, and en electron beam source for irradiating the wide band gap semiconductor layer with an electron beam. The wide band gap semiconductor layer is configured to be irradiated with the electron beam to emit deep-ultraviolet light through the sapphire substrate. A thickness t1 of the sapphire substrate satisfies: t1??·E3 where B s an energy of the electron beam (keV); and ? is 1 ?m/(keV)3.Type: ApplicationFiled: March 23, 2012Publication date: September 27, 2012Applicant: STANELY ELECTRIC CO., LTD.Inventors: Takahiro MATSUMOTO, Sho Iwayama
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Patent number: 8168459Abstract: A method for manufacturing a resin-embedded semiconductor light-emitting device that is capable of preventing a semiconductor film from being damaged when a growth substrate is delaminated using a laser lift-off method, and that is capable of preventing foreign matter from adhering to the semiconductor film when a resin material is applied. A laser exposure step to delaminate the growth substrate from the semiconductor film comprises a first laser exposure step for performing laser exposure at an energy density at which the resin is broken down but the semiconductor film is not broken down, in a range including a portion adjacent to at least one section of the semiconductor film divided by dividing grooves and at least one section of resin, and a second exposure step for performing laser exposure at an energy density at which the semiconductor film can be broken down in a range including at least one section.Type: GrantFiled: January 19, 2011Date of Patent: May 1, 2012Assignee: Stanley Electric Co., Ltd.Inventors: Sho Iwayama, Takanobu Akagi
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Publication number: 20110177633Abstract: A method for manufacturing a resin-embedded semiconductor light-emitting device that is capable of preventing a semiconductor film from being damaged when a growth substrate is delaminated using a laser lift-off method, and that is capable of preventing foreign matter from adhering to the semiconductor film when a resin material is applied. A laser exposure step to delaminate the growth substrate from the semiconductor film comprises a first laser exposure step for performing laser exposure at an energy density at which the resin is broken down but the semiconductor film is not broken down, in a range including a portion adjacent to at least one section of the semiconductor film divided by dividing grooves and at least one section of resin, and a second exposure step for performing laser exposure at an energy density at which the semiconductor film can be broken down in a range including at least one section.Type: ApplicationFiled: January 19, 2011Publication date: July 21, 2011Applicant: STANLEY ELECTRIC CO.Inventors: Sho IWAYAMA, Takanobu Akagi
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Publication number: 20090239324Abstract: In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.Type: ApplicationFiled: March 19, 2009Publication date: September 24, 2009Applicant: Stanley Electric Co., Ltd.Inventors: Takako Chinone, Shinichi Tanaka, Sho Iwayama, Yusuke Yokobayashi, Satoshi Tanaka
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Patent number: 7186579Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 ? in thickness of GaN barrier layer 62 and about 35 ? in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.Type: GrantFiled: August 25, 2004Date of Patent: March 6, 2007Assignee: Toyoda Gosei Co., Ltd.Inventors: Takashi Hatano, Sho Iwayama, Masayoshi Koike
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Publication number: 20060159146Abstract: In a semiconductor laser diode, a mount portion is erected on a support member and a semiconductor laser diode chip is mounted on the mount portion. A window is formed on a cap, and a laser beam generated by the semiconductor laser diode chip is emitted through the window to an outside. An optical thin film layer and a photocatalyst layer are formed on an end face of a resonator at a light output side of the semiconductor laser diode chip.Type: ApplicationFiled: December 22, 2005Publication date: July 20, 2006Applicant: Toyoda Gosei Co., Ltd.Inventors: Sho Iwayama, Jun Minoura, Tamiyo Umezaki
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Publication number: 20050032344Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 ? in thickness of GaN barrier layer 62 and about 35 ? in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.Type: ApplicationFiled: August 25, 2004Publication date: February 10, 2005Applicant: Toyoda Gosei Co., Ltd.Inventors: Takashi Hatano, Sho Iwayama, Masayoshi Koike
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Patent number: 6801559Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.Type: GrantFiled: March 7, 2003Date of Patent: October 5, 2004Assignee: Toyoda Gosei Co., Ltd.Inventors: Takashi Hatano, Sho Iwayama, Masayoshi Koike
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Publication number: 20030169794Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.Type: ApplicationFiled: March 7, 2003Publication date: September 11, 2003Applicant: Toyoda Gosei Co., Ltd.Inventors: Takashi Hatano, Sho Iwayama, Masayoshi Koike