Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: A method for producing a silicon carbide single crystal including a steps of, loading a sublimation-raw material into a reaction vessel of a production apparatus for a silicon carbide single crystal, and placing a seed crystal for a silicon carbide single crystal in such a manner that the seed crystal substantially faces the sublimation-raw material, and re-crystallizing the sublimation-raw material sublimated by heating on a surface of the seed crystal to grow a silicon carbide single crystal, the method further including applying a thermosetting material containing silicon component to a back surface of the seed crystal before the placing the seed crystal in the reaction vessel of the production apparatus for the silicon carbide single crystal.

Abstract: A dummy wafer formed by sintering a mixture containing a silicon carbide powder and a non-metallic sintering auxiliary, wherein a coating film layer containing silicon carbide is provided on the surface of the dummy wafer including at least one of either upper and lower main faces of the dummy wafer by the chemical vapor deposition method.

Abstract: A sputtering target which is prepared from a material containing silicon carbide and silicon wherein a volume ratio of silicon carbide ranges from 50% to 70%, when it is defined in such that a volume ratio (%) of silicon carbide=the whole volume of silicon carbide/(the whole volume of silicon carbide+the whole volume of silicon)×100.

Abstract: A method for making a dry plating built-up film comprises providing silicon carbide as a starting source and subjecting to dry plating while changing a concentration of a reactive gas continuously or intermittently to deposit and form, on a substrate, a thin film having different refractive indices along its thickness. A method for making a sputter built-up film is also described, which comprising providing silicon carbide as a target and subjecting to sputtering while changing making electric power against the target continuously or intermittently to deposit and form a thin film having different refractive indices along its thickness.

Abstract: A method of producing a wafer comprising conducting a baking treatment on a sintered silicon carbide cut in the form of wafer. An embodiment in which the temperature for the above-mentioned baking treatment is 1350° C. or more, embodiments in which the temperature for the above-mentioned baking treatment is 1400 to 1550° C. and the pressure for the above-mentioned baking treatment is 10−4 Torr or less, and the like are preferable. A wafer which can be produced by the above-mentioned method of producing a water. Embodiments in which the above-mentioned flexural strength measured by a flexural test method (JIS 1601) is 700 MPa or more, the above-mentioned element composition ratio Si/C in all parts is 0.48/0.52 to 0.52/0.48, and the above-mentioned density is 2.9 g/cm3 or more. A high quality wafer improving thermal shock resistance and generating no crack by thermal shock, and a method which can produce this wafer efficiently are provided.

Abstract: There is provided a laminated structure having a silicon carbide coating layer formed by sputtering on an alloy substrate, and the silicon carbide has a light transmittance of 70% or greater. It is preferable that the alloy substrate is a magnetic alloy or a phase-changing alloy, the impurity ratio on the surface of the silicon carbide coating layer is 1.0×1012 atoms/cm2 or less and the thickness of the silicon carbide coating layer is 10 to 100 nm. Since the laminated structure has a silicon carbide coating layer which is excellent in oxidation resistance, chlorine resistance, humidity resistance, and which has high refractive index, high light transmittance and the like, it is suitable for an optical disk recording medium such as a CD-RW, a DVD-RAM or the like.

Abstract: A method for making a dry plating built-up film comprises providing silicon carbide as a starting source and subjecting to dry plating while changing a concentration of a reactive gas continuously or intermittently to deposit and form, on a substrate, a thin film having different refractive indices along its thickness. A method for making a sputter built-up film is also described, which comprising providing silicon carbide as a target and subjecting to sputtering while changing making electric power against the target continuously or intermittently to deposit and form a thin film having different refractive indices along its thickness.

Abstract: A method for making a dry plating built-up film comprises providing silicon carbide as a starting source and subjecting to dry plating while changing a concentration of a reactive gas continuously or intermittently to deposit and form, on a substrate, a thin film having different refractive indices along its thickness. A method for making a sputter built-up film is also described, which comprising providing silicon carbide as a target and subjecting to sputtering while changing making electric power against the target continuously or intermittently to deposit and form a thin film having different refractive indices along its thickness.

Abstract: A laminated structure which has a substrate formed of a synthetic resin or glass and a silicon carbide coating layer formed by sputtering, wherein the light transmittance of the silicon carbide coating layer is 80% or less. Preferably, the silicon carbide coating layer has a light reflectance of 10 to 50%, the synthetic resin is polycarbonate, the impurity ratio on the surface of the silicon carbide coating layer is 1.0×1012 atoms/cm2 or less, and the silicon carbide layer has a thickness of 15 to 100 nm. The laminated structure is suitable for a recording medium such as a CD-ROM and a DVD-ROM since it has a silicon carbide layer excellent in oxidation resistance, chlorine resistance, moisture resistance, and the like.

Abstract: A method of producing a wafer comprising conducting a baking treatment on a sintered silicon carbide cut in the form of wafer. An embodiment in which the temperature for the above-mentioned baking treatment is 1350° C. or more, embodiments in which the temperature for the above-mentioned baking treatment is 1400 to 1550° C. and the pressure for the above-mentioned baking treatment is 10−4 Torr or less, and the like are preferable. A wafer which can be produced by the above-mentioned method of producing a water. Embodiments in which the above-mentioned flexural strength measured by a flexural test method (JIS 1601) is 700MPa or more, the above-mentioned element composition ratio Si/C in all parts is 0.48/0.52 to 0.52/0.48, and the above-mentioned density is 2.9g/cm3 or more.