Abstract: Disclosed is a displacement sensor, comprising a pair of plates of magnetic bubble material disposed parallelly to each other across a space and a galvanomagnetic element disposed within the magnetic field formed in the aforementioned space and adapted to be allowed to move parallelly to the inner surfaces of the aforementioned pair of plates. The sensor thus constructed detects displacement or vibration with the galvanomagnetic element retained in a non-contact relation with the pair of plates on the principle that the output signal from the galvanomagnetic element varies in proportion to the amount of movement of this element in the space in response to displacement or vibration.

Abstract: Planar semiconductor device including a crystalline layer of Ga.sub.x Al.sub.1-x Sb compound semiconductor (0.1<x<0.3) grown on a GaSB substrate and a narrow energy band gap semiconductor grown as an active layer on the crystalline layer and having electrodes formed on the active layer in the planar form.

Abstract: A semiconductor capable of exhibiting an electron transfer effect in a high electric field is used as a Hall element. Application of a voltage large enough to give rise to an electron transfer effect to the current input electrodes of the Hall element brings about a decrease in the concentration of electrons contributing to the Hall effect occurring within the semiconductor, an increase in the Hall coefficient and a notable enhancement in the sensitivity of the Hall element.

Abstract: Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.

Abstract: Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, and the like of millimeter or submillimeter bands.

Abstract: In a high electric field domain device composed of a plurality of circuit elements each provided with a high electric field domain-generating electrode and a high electric field domain-suppressing electrode, logic operations can be performed by preparatorily applying affirmative signals and their corresponding negative signals to the suppressing electrodes of the individual circuit elements and subsequently applying pulse-coded signals of affirmations and negations to the generating electrodes of the circuit elements which have had the affirmative and corresponding negative signals applied in advance thereto.

Abstract: A semiconductor device including a cathode and an anode for applying a bias electric field to a semiconductor exhibiting negative conductivity under high electric field, a region in which the electric field is locally lower than that in other regions, at least two signal electrodes of field effect type additionally provided in the region of said lower field to which signals are supplied to control the generation of high electric field domains for the performance of logical operations.

Abstract: A transmission line is disclosed which comprises a conductive layer, a resistive semiconductor layer disposed on the conductive layer and a blocking electrode disposed on the resistive semiconductor layer. By applying a biasing voltage between the blocking electrode and the conductive layer, a depletion layer is produced in the resistive semiconductor layer, the depletion layer formed in the semiconductor layer being used as a medium for transmission of electromagnetic wave.

Abstract: The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semiconductor device includes two ohmic electrodes disposed at opposite ends to apply a bias voltage, at least one means for generating a high electric field domain in the semiconductor device by means applying an input signal to the generating means, at least one means for inhibiting generation of a high electric field domain by means applying another input signal to the inhibiting means, and means for detecting the existence of the high electric field domain in the semiconductor device to produce an output signal.

Abstract: An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the element being constructed so that the sectional area of the region near the anode is made larger than the sectional area of the other regions of the element, whereby the distribution of the high electric field in the interior of the element is made uniform along the element, that is, from the region near the anode toward the region near the cathode to thereby broaden the region having an effective negative resistance. Furthermore, and in an alternative embodiment, there is disclosed a negative resistance element in whch the region near the cathode besides the region near the anode is also made to have a larger sectional area than the other regions of the element.

Abstract: Disclosed is a bulk semiconductor device which employs a semiconductor element exhibiting negative conductivity under a high electric field. Said semiconductor element has at least two regions and at least one bridge portion and each region thereof is connected with the region adjacent thereto by a bridge portion. Means for controlling the lateral spatial growth of a high electric field domain is provided on or near each bridge portion. The growth of a high electric field domain generated in one of the regions into the adjacent region is controlled by applying a signal to said controlling means.

Abstract: The invention disclosed provides a method and semiconductor device for electrically detecting an inverted magnetic field. A semiconductor magneto-resistive element having two electrodes on opposite ends is disposed in a magnetic field, the magnetic field having at least one inverted magnetic field portion which is applied to one part of the semiconductor element while the normal magnetic field is applied to the other part of the semiconductor element. A current is applied to the two electrodes of the semiconductor element, and measurement of the resistance of the semiconductor device is effected for detecting the inverted magnetic field.

Abstract: The invention disclosed provides a semiconductor device and method whereby an inverted magnetic field such as a magnetic bubble is detected by placing one part of the semiconductor device comprising at least one Hall element having two input electrodes at opposite ends and at least one Hall output electrode in an inverted magnetic field, providing a current in the semiconductor device across said two input electrodes, and detecting the electrical voltage of the at least one Hall output electrode, and determining the inverted magnetic field position by changes in the electrical voltage of the Hall output electrode.

Abstract: A method of controlling magnetic strip domains is disclosed wherein a magnetic material having at least one ion-implanted region is placed under a bias magnetic condition which permits magnetic strip domains to exist in said magnetic material and subjected to one or more control magnetic fields to thereby generate and/or control magnetic strip domains.