Abstract: A method for manufacturing a steel sheet, including annealing a steel raw material having an Si content of 1.0 mass % or more and a Cr content of 1 mass % or less, under a condition satisfying: a following formula 1A if the Cr content of the steel raw material is 0.2 mass % or more and 0.6 mass % or less: 0.19 ? exp ? ( - 10770 T + 273 ) * t ? 0.75 Cr [ % ] + 0.48 Formula ? 1 ? A a following formula 1B if the Cr content of the steel raw material is less than 0.2 mass %: 0.19 ? exp ? ( - 10770 T + 273 ) * t ? 0.63 Formula ? 1 ? B or a following formula 1C if the Cr content of the steel raw material is more than 0.6 mass % and 1.0 mass % or less: 0.19 ? exp ? ( - 10770 T + 273 ) * t ? 0.93 Formula ? 1 ? C where in the formulas 1A, 1B, and 1C, T is 500° C. or higher and a soaking temperature (° C.

Abstract: The sputtering target of the present disclosure includes: an aluminum matrix; and (1) a material or phase containing aluminum and further containing either a rare earth element or a titanium group element or both a rare earth element and a titanium group element or (2) a material or phase containing either a rare earth element or a titanium group element or both a rare earth element and a titanium group element, at a content of 10 to 70 mol % in the aluminum matrix.

Abstract: A sputtering target-backing plate assembly comprising, a target has a thickness of 2.0 to 15.0 mm is joined to a backing plate, the backing plate has a recessed section having a depth of 0.5 to 5.0 mm on a plate surface, the target is fitted into the recessed section, and the assembly has a swaging structure in which an outer-peripheral-side surface of the target is clamped by a recessed section inner-peripheral-side surface of the backing plate.

Abstract: A sputtering target including aluminum and either a rare earth element or a titanium group element or both a rare earth element and a titanium group element, and the sputtering target has a fluorine content of 100 ppm or less.

Abstract: A ruthenium-based sputtering target having a cast structure, in which a sputter surface of the sputtering target includes at least two or more types of regions, and crystal surfaces in the regions are different from each other, each of the crystal surfaces being specified by a main peak of X-ray diffraction. An object of the present disclosure is to provide a Ru-based sputtering target having no void, having high purity and a low degree of structural anisotropy, and capable of forming a Ru-based film having low particle properties, high film thickness uniformity, and high surface uniformity, and a method for manufacturing the same. According to the present disclosure, there is provided a ruthenium-based sputtering target having a cast structure, in which a sputter surface of the sputtering target includes at least two or more types of regions, and crystal surfaces in the regions are different from each other, each of the crystal surfaces being specified by a main peak of X-ray diffraction.

Abstract: A sputtering target is a sputtering target including aluminum and either a rare earth element or a titanium group element or both a rare earth element and a titanium group element, and the sputtering target has a chlorine content of 100 ppm or less.