Abstract: A method of assembling semiconductor devices includes applying a metal paste including a plurality of metal particles having an average size less than 50 nanometers and a binder material onto a metal terminal of a package substrate. The metal paste is processed including a heat up step in a reducing gas atmosphere and then a vacuum sintering step at a temperature of at least 200° C. for forming a sintered metal coating. A semiconductor die is attached onto a die attach area of the package substrate. A bond wire is then connected between a bond pad on the semiconductor die and the sintered metal coating on the metal terminal.

Abstract: A method of assembling semiconductor devices includes dispensing a metal paste including metal particles in a solvent onto a bonding area of a plurality of metal terminals of a leadframe. The dispensing provides a varying thickness over the bonding area. The solvent is evaporated to form a sloped metal coating including a first sloped top face and a second sloped top face. The first sloped top face is closer to the die pad compared to the second sloped top face, the second sloped top face increases in coating thickness with decreasing distance to the die pad, and the first sloped top face decreases in coating thickness with decreasing distance to the die pad. A bottom side of semiconductor die including a plurality of top side bond pads is attached to the die pad. Bond wires are connected between the bond pads and the second sloped top faces.