Abstract: A rib structure for a display device includes a light-transmissive rib structure containing therein a material absorbent of visible light so that a visible light absorption distance is 40 to 1200 ?m (the visible light absorption distance L (?m) means a distance such that visible light decreases to exp(?T/L) times less in connection to the travel distance T (?m), that is, visible light is absorbed by 1-exp(?T/L)).

Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of: Mass percentage PbO 44 to 68% Bi2O3 0 to 18%, B2O3 19 to 23%, SiO2 1.2 to 5%, Al2O3 2 to 6%, ZnO 4 to 9%, CuO 0.1 to 0.5%, In2O3 1.1 to 2%, SnO2 0 to 1%, and CeO2 0 to 1%.

Abstract: A rib structure for a display device includes a light-transmissive rib structure containing therein a material absorbent of visible light so that a visible light absorption distance is 40 to 1200 &mgr;m (the visible light absorption distance L (&mgr;m) means a distance such that visible light decreases to exp(−T/L) times less in connection to the travel distance T (&mgr;m), that is, visible light is absorbed by 1-exp(−T/L)).

Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of: 1 Mass percentage PbO 44 to 68% Bi2O3 0 to 18%, B2O3 19 to 23%, SiO2 1.2 to 5%, Al2O3 2 to 6%, ZnO 4 to 9%, CuO 0.1 to 0.5%, In2O3 1.1 to 2%, SnO2 0 to 1%, and CeO2 0 to 1%.

Abstract: A gas-discharge display panel is manufactured by sealing up a front substrate and a rear substrate by a sealing member. A relationship of Tg≧Tf exists between a glass transition point Tg of a dielectric substance formed on the front substrate and a temperature Tf at which the front substrate and the rear substrate are sealed up.

Abstract: Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Abstract: Ceramic circuit substrate which is sintered at 900.degree. to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850.degree. to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Abstract: According to this method for manufacturing a multilayer glass-ceramic circuit board, a green sheet laminate is fired in a non-oxidizing atmosphere in a first firing step so that a void content of at least 10% is maintained and strength of the ceramic laminate is increased. Then the laminate is fired in an oxidizing atmosphere in a second firing step so that the organic binder contained in the laminate is removed and the residual carbon content is at most 200 ppm. Thereafter the laminate is fired in a reducing atmosphere in a third firing step to reduce the oxidized conductor circuit. Finally, the laminate is fired in a non-oxidizing atmosphere in a fourth firing step to densify the ceramic laminate. The firing temperature in the first, second and third steps is 100.degree.-200.degree. C. lower than the softening point of the glass and the firing temperature in the fourth step is higher than the softening point of the glass and lower than the melting point of the conductor.

Abstract: A ceramic thin film hybrid circuit board is provided by flattening the surface of a ceramic multi-layer interconnection substrate, forming capture pads on the flattened surface, filling spaces between the capture pads with an insulating layer composed of a glass material or an organic resin material, grinding the resultant surface until the capture pads are exposed to flatness, and laminating a plurality of thin film interconnection layers on the flattened surface. The ceramic thin film hybrid circuit board has an increased package density of mounted electronic parts such as LSIs and the like because failures of thin film interconnection layer generated owing to the roughness of the surface of the ceramic substrate, defects such as voids and the hollows produced with the capture pads are greatly reduced, and is very suitable for large scale electronic computers, in which the wiring length is reduced so as to reduce the signal delay.

Abstract: A ceramic composition comprising 55-70 vol % of a borosilicate glass consisting of 65-88 wt % of SiO.sub.2, 5-25 wt % of B.sub.2 O.sub.3, 1-5 wt % of one or more of Li.sub.2 O, K.sub.2 O and Na.sub.2 O, and 0-5 wt % of Al.sub.2 O.sub.3, 5-30 vol % of alumina as filler, 5-35 vol % of cordierite and 0-20 vol % of quartz glass is provided for a ceramic circuit board for an electronic device such as an electronic computer.

Abstract: A method for forming conductor layers of substrates for mounting LSIs and the like and a fabrication method of multilayer substrates are disclosed. These methods comprise steps of forming a metal underlayer having a shape similar to that of a conductor pattern on the substrate, forming an insulation layer over portions of the substrate which are not covered by the metal underlayer, and disposing a plating layer on the metal underlayer by carrying out electroless plating while using the insulation layer as the resist and thereby forming conductors. As compared with a conventional conductor layer forming method, the number of fabrication steps is reduced. And the elimination of the surface grinding step facilitates the fabrication.

Abstract: A gas detecting apparatus incorporates a number of gas detecting elements which react with a variety of gases and exhibit gas sensitivities differing from one another in dependence on the gas species. The detection patterns obtained by quantitizing the detection outputs of the gas detecting elements are compared with a plurality of standard patterns prepared previously for assumed combinations of gas species and concentrations thereof. On the basis of the standard pattern which is same or most similar to the detection pattern, the gas species is identified.

Abstract: A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.

Abstract: A dew sensor of direct current type and resistance-lowering type with increasing humidity for quick and sharp detection of dewing is provided, which comprises a pair of counterposed electrodes, humidity-sensitive layer of insulating porous metal oxide with a porosity of 20 to 60% provided on and between the counterposed electrodes, and an organic polymer coating layer having a thickness of 0.05 to 2 .mu.m provided on the humidity-sensitive layer.

Abstract: A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors having different gas selectivities. The gas selectivities, as a characteristic constant of the specific gas sensor, was previously determined. The measured output voltages and gas selectivities are then used for solving plural simultaneous equations for gas concentrations.