Patents by Inventor Shoichi Uno

Shoichi Uno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor device
    Patent number: 7754595
    Abstract: An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
    Type: Grant
    Filed: June 25, 2007
    Date of Patent: July 13, 2010
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Enomoto, Shoichi Uno, Seiko Ishihara, Takashi Yahata
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20080003770
    Abstract: An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
    Type: Application
    Filed: June 25, 2007
    Publication date: January 3, 2008
    Inventors: Hiroyuki Enomoto, Shoichi Uno, Seiko Ishihara, Takashi Yahata