Abstract: The present invention provides a metal complex containing a cation represented by [(MII)2(MI)2(LC)2(LB)4]2+ [in the aforementioned formula, MII is PtII or PdII, MI is H+, AuI, AgI, CuI, HgI, TlI or PbI, and LC and LB are ligands]. The metal complex of the present invention is useful as a light emitting material of an organic EL device.

Abstract: The present invention provides a metal complex containing a cation represented by [(MII)2(MI)2(LC)2(LB)4]2+ [in the aforementioned formula, MII is PtII or PdII, MI is H+, AuI, AgI, CuI, HgI, TlI or PbI, and LC and LB are ligands]. The metal complex of the present invention is useful as a light emitting material of an organic EL device.

Abstract: Disclosed is a metal complex containing a composition represented by the following formula (a). [(PdII)2(MI)2(X)2(L)4(L?)2] (In the formula (a), MI represents AgI, AuI or CuI; X represents Cl, Br or I; L represents a group represented by formula (1); L? represents a group represented by formula (2); two MIs may be the same as or different from each other; four Ls may be the same as or different from each other; and two L's may be the same as or different from each other.) (In the formulae (1) and (2), R1, R2 and R3 independently represent a hydrogen atom, a halogen atom, a hydroxy group, an optionally substituted alkyl group, an optionally substituted aryl group or an optionally substituted monovalent heterocyclic group.

Abstract: A novel luminescent metal complex comprises a composition of [(PtII)2(AuI)2(MI)2(L)8] where MI denotes AgI or CuI, and L denotes a structure represented by the formula (1)

Abstract: There is provided a novel luminescent metal complex. A metal complex having a composition of [(PtII)2(MI)2(X)2(L)4(LH)2], where MI denotes AgI, AuI or CuI, X denotes Cl, Br or I, L denotes a structure represented by the formula (1), and LH denotes a structure represented by the formula (2).

Abstract: Disclosed is a metal complex containing a composition represented by the following formula (a). [(PdII)2(MI)2(X)2(L)4(L?)2] (In the formula (a), MI represents AgI, AuI or CuI; X represents Cl, Br or I; L represents a group represented by formula (1); L? represents a group represented by formula (2); two MIs may be the same as or different from each other; four Ls may be the same as or different from each other; and two L's may be the same as or different from each other.) (In the formulae (1) and (2), R1, R2 and R3 independently represent a hydrogen atom, a halogen atom, a hydroxy group, an optionally substituted alkyl group, an optionally substituted aryl group or an optionally substituted monovalent heterocyclic group.

Abstract: A novel luminescent metal complex comprises a composition of [(PtII)2(AuI)2(MI)2(L)8] where MI denotes AgI or CuI, and L denotes a structure represented by the formula (1)

Abstract: There is provided a novel luminescent metal complex. A metal complex having a composition of [(PtII)2(MI)2(X)2(L)4(LH)2], where MI denotes AgI, AuI or CuI, X denotes Cl, Br or I, L denotes a structure represented by the formula (1), and LH denotes a structure represented by the formula (2).

Abstract: An object of the present invention is to provide a novel metal complex. A metal complex having a composition of [(PtII)2(MI)4(L)8], where MI is H+, AgI, AuI or CuI, and L is a compound represented by the following chemical formula. A metal complex having a composition of [(PtII)2(MI)4(X)2(L)6], where MI is AgI, AuI or CuI, X is Cl?, Br? or I?, and L is a compound represented by the following chemical formula. In the formula, R1, R2 and R3 are independently a hydrogen atom, a chlorine atom, a bromine atom, an iodine atom, a hydroxyl group, a phenyl group, a trifluoromethylphenyl group, a pentafluorophenyl group, a naphthyl group, a methyl group, an ethyl group, an i-propyl group, a t-butyl group, a trifluoromethyl group, a hydroxymethyl group or a hydroxyethyl group. At least one of R1, R2 and R3 in the formula is not a hydrogen atom.

Abstract: To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6<y<1.0), and the carrier blocking layers are made of a material having a wider band gap and a lower refractive index than the material of the waveguide layers.

Abstract: A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

Abstract: A projection optical apparatus comprises a projection optical system for projecting the image of an object onto a substrate, data collecting means for obtaining data regarding a factor which causes a variation in the optical characteristic of the projection optical system, adjusting means for adjusting the relation between the substrate and the image of the object relative to the variation in the optical characteristic of the projection optical system, means for determining the amount of adjustment by the adjusting means in accordance with a model formula using a predetermined parameter on the basis of the data obtained by the data collecting means, means for independently measuring the variation in the optical characteristic of the projection optical system, and means for correcting the parameter of the model formula on the basis of the result measured by the measuring means.

Abstract: A surface displacement sensor is so designed that a stop or aperture for controlling an angle of opening is disposed at the position of a pupil of a detection optical system in which a slit image is focused on the surface to be detected and the light rays reflected from the surface to be detected are collected to re-focus the slit image on the light receiving surface of the sensor. When the height position of the surface to be detected is detected by such stop for controlling the angle of opening, the deviation of the distribution of intensity of light which tends to occur in the widthwise direction of the slit through which passes the light beam which in turn focuses a slit image, can be positively decreased by limiting the angle of opening N.A. in the widthwise direction of the slit for passing the light beam to focus a slit image to be narrow and consequently the degree of detection accuracy can be improved.

Abstract: A projection optical apparatus adapted for use in lithographic apparatus for semiconductor device manufacturing purposes and the like. A monitoring light beam of a given polarization is introduced into an imaging optical system of the projection optical apparatus and a polarized component of the monitoring light beam transmitted through the imaging optical system is subjected to photoelectric conversion. A variation of an optical characteristic of the imaging optical system is detected in accordance with the photoelectrically converted output signal.

Abstract: An apparatus for forming the optical image of a photo-pattern placed on a first plane on a second plane comprises projection means having a projection optical system disposed between the first plane and the second plane to form the optical image, focus detecting means including means for detecting the position of the second plane relative to the projection optical system, the in-focus position corresponding to the position of the second plane when the imaging plane of the projection optical system and the second plane are coincident with each other being preset, the focus detecting means putting out a detection signal when the in-focus position is detected by the detecting means, fluctuation detecting means for determining the amount of fluctuation of the imaging plane of the projection optical system caused correspondingly to a variation in the refractive index of the atmosphere, and means responsive to the fluctuation detecting means to control the focus detecting means so that the in-focus position is re-s

Abstract: A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.