Abstract: A semiconductor device whose working life can be improved is obtained. This semiconductor device comprises a first conductive layer, a second conductive layer and a silicon oxide film, formed between the first and second conductive layers, containing chlorine introduced therein. Thus, the silicon oxide film is inhibited from formation of electron traps while a large number of holes are formed in an initial stage of electron injection into the silicon oxide film.

Abstract: A semiconductor device whose working life can be improved is obtained. This semiconductor device comprises a first conductive layer, a second conductive layer and a silicon oxide film, formed between the first and second conductive layers, containing chlorine introduced therein. Thus, the silicon oxide film is inhibited from formation of electron traps while a large number of holes are formed in an initial stage of electron injection into the silicon oxide film.

Abstract: A plurality of source/drain regions are formed on a surface of a silicon substrate at a prescribed space. Floating gate electrodes are formed on sides of a channel region closer to the source/drain regions respectively through a first insulator film. Projections are formed on peripheral edge portions of the floating gate electrodes respectively. A control gate electrode is formed over the channel region and the floating gate electrodes through a second insulator film. The control gate electrode is opposed to the floating gate electrodes at one surface through the second insulator film.

Abstract: A semiconductor memory capable of attaining a long life, a low voltage, a high-speed operation, low power consumption and high integration is provided. The semiconductor memory comprises a control gate electrode, a floating gate electrode, a semiconductor region, a first insulator film formed on one surface of the semiconductor region and a second insulator film formed on another surface of the semiconductor region. A prescribed voltage is applied to the control gate electrode or a drain region thereby injecting carriers from the control gate electrode or the drain region into the floating gate electrode through the first insulator film, the semiconductor region and the second insulator film.

Abstract: The invention relates to a method of growing a single crystal CaF.sub.2 film on a single crystal Si substrate having a principal plane of (100). According to the invention, the substrate temperature is first set at 550.degree.-600.degree. C. to grow a first CaF.sub.2 film (first stage) and the substrate temperature is then raised to 750.degree. C. or higher to grow a second CaF.sub.2 film on the first CaF.sub.2 film (second stage), thus the growth of the CaF.sub.2 films is performed separately in two stages. Since, in the second stage, the growth of CaF.sub.2 film is possible even at higher substrate temperature, the method of growing according to the invention makes it possible to grow a single crystal CaF.sub.2 film with flat surface morphology and excellent crystal quality.