Patents by Inventor Shota Nunomura

Shota Nunomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060269690
    Abstract: A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.
    Type: Application
    Filed: May 27, 2005
    Publication date: November 30, 2006
    Applicants: ASM JAPAN K.K., Kyushu University, National University Corporation
    Inventors: Yukio Watanabe, Masaharu Shiratani, Kazunori Koga, Shota Nunomura, Shingo Ikeda, Nobuo Matsuki, Atsuki Fukazawa
  • Publication number: 20060105583
    Abstract: A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.
    Type: Application
    Filed: November 17, 2004
    Publication date: May 18, 2006
    Applicants: ASM JAPAN K.K., Kyushu University, National University Corporation
    Inventors: Shingo Ikeda, Nobuo Matsuki, Yoshinori Morisada, Yukio Watanabe, Masaharu Shiratani, Kazunori Koga, Shota Nunomura