Abstract: An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.

Abstract: A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal; (c) removing the metal-containing layer with a base.

Abstract: A substrate processing method (a) provides a substrate on a substrate support unit provided in a chamber, and (b) supplies a processing gas into the chamber. The substrate includes a first region formed of a material including silicon and a second region formed of a material different from the material of the first region. The processing gas includes tungsten and a component for etching the first region. The substrate processing method (c) repeats a cycle while the processing gas is supplied into the chamber at (c). The cycle includes first to third processes. The power level of a source radio-frequency power in the first process is higher than the power level of the source radio-frequency power in each of the second and third processes.

Abstract: An etching method includes preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas. In the etching, a flow rate of the tungsten-containing gas is the largest among all gases contained in the processing gas except for an inert gas.

Abstract: An etching method includes: (a) providing a substrate including a first region containing silicon and nitrogen and a second region containing silicon and oxygen; (b) forming a tungsten-containing deposit on the first region using a first plasma generated from a first processing gas containing fluorine, tungsten, and at least one selected from a group consisting of carbon and hydrogen; and (c) after (b), etching the second region using a second plasma generated from a second processing gas different from the first processing gas.

Abstract: An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.

Abstract: An etching method includes (a) providing a substrate. The substrate includes a first region and a second region. The second region contains silicon oxide, and the first region contains a material different from a material for the second region. The etching method further includes (b) forming a deposit preferentially on the first region with first plasma generated from a first process gas containing a carbon monoxide gas. The etching method further includes (c) etching the second region.

Abstract: There is provision of a processing method including a) depositing deposits on a patterned mask layer formed over an etching film; b) removing a part of the mask layer, a part of the deposits, or both the part of the mask layer and the part of the deposits; and c) repeating a) and b) at least once, thereby causing a taper angle of a side surface of a pattern formed in the mask layer to be a desired angle.

Abstract: A method for manufacturing a tire includes a rubber layer forming step of helically wrapping non-conductive strip rubber supplied from an extruder around an outer circumferential side of a conductive case main body to form a plurality of rubber layers. The rubber layer forming step includes: a non-conductive strip rubber wrapping step of wrapping the non-conductive strip rubber around; and a conductive strip rubber wrapping step of superposing conductive rubber on the non-conductive strip rubber to wrap around as conductive strip rubber. The conductive strip rubber wrapping step includes: wrapping pieces of the conductive rubber around in a layered manner so as to overlap each other in a tire radial direction; and forming a conductive portion reaching up to a tire surface.

Abstract: A processing method of a substrate includes placing the substrate having a mask film; forming a deposit on the mask film by plasma of a processing gas which includes a first gas and a second gas and in which a flow rate ratio R1 of the first gas to the second gas is controlled; and removing a part of the mask film and/or a part of the deposit by plasma of a processing gas which is a same kind as the processing gas used in the forming of the deposit and in which a flow rate ratio R2 is controlled to satisfy R2<R1. A taper angle of a pattern of the mask film is controlled to a required value by repeating the forming of the deposit and the removing of the part of the mask film and/or the part of the deposit a preset number of times.

Abstract: A vehicle traveling environment detecting apparatus includes first to third stereo cameras, first to third image processors, and an image controller. The first stereo camera includes first and second cameras. The second stereo camera includes the first camera and a third camera. The third stereo camera includes the second camera and a fourth camera. The first to third image processors are configured to perform stereo image processing on first to third outside images and thereby determine first to third image processing information including first to third distance information, respectively. The first to third outside images are configured to be obtained through imaging of an environment outside the vehicle by the first to third stereo cameras, respectively. The image controller is configured to perform integration of the first image processing information, the second image processing information, and the third image processing information and thereby recognize a traveling environment of the vehicle.

Abstract: An automatic driving system includes a vehicle control calculator, a f recognizer, a passerby recognition calculator, and a notifier. The vehicle control calculator causes an vehicle to perform automatic traveling along a traveling route. The recognizer acquires information on a traveling environment ahead of the vehicle. The passerby recognition calculator recognizes a passerby ahead of the vehicle based on the information on the traveling environment. The notifier notifies the passerby of a recognition state that the passerby is recognized, when the passerby is recognized by the passerby recognition calculator. The passerby recognition calculator examines whether the recognized passerby is facing a direction of the vehicle based on information on the passerby, acquired by the recognizer, and specifies the passerby as a notification target passerby when recognizing the passerby facing the direction of the vehicle. The notifier notifies the recognition state to the notification target passerby.

Abstract: An automatic driving system includes a vehicle control calculator, a f recognizer, a passerby recognition calculator, and a notifier. The vehicle control calculator causes an vehicle to perform automatic traveling along a traveling route. The recognizer acquires information on a traveling environment ahead of the vehicle. The passerby recognition calculator recognizes a passerby ahead of the vehicle based on the information on the traveling environment. The notifier notifies the passerby of a recognition state that the passerby is recognized, when the passerby is recognized by the passerby recognition calculator. The passerby recognition calculator examines whether the recognized passerby is facing a direction of the vehicle based on information on the passerby, acquired by the recognizer, and specifies the passerby as a notification target passerby when recognizing the passerby facing the direction of the vehicle. The notifier notifies the recognition state to the notification target passerby.

Abstract: There is provision of a processing method including a) depositing deposits on a patterned mask layer formed over an etching film; b) removing a part of the mask layer, a part of the deposits, or both the part of the mask layer and the part of the deposits; and c) repeating a) and b) at least once, thereby causing a taper angle of a side surface of a pattern formed in the mask layer to be a desired angle.

Abstract: A vehicle traveling environment detecting apparatus includes first to third stereo cameras, first to third image processors, and an image controller. The first stereo camera includes first and second cameras. The second stereo camera includes the first camera and a third camera. The third stereo camera includes the second camera and a fourth camera. The first to third image processors are configured to perform stereo image processing on first to third outside images and thereby determine first to third image processing information including first to third distance information, respectively. The first to third outside images are configured to be obtained through imaging of an environment outside the vehicle by the first to third stereo cameras, respectively. The image controller is configured to perform integration of the first image processing information, the second image processing information, and the third image processing information and thereby recognize a traveling environment of the vehicle.

Abstract: In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

Abstract: In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Abstract: A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of a wafer W; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.