Abstract: An image retrieving device includes processing circuitry configured to give a query image that is an image to be identified to a first learning model, acquire a feature vector of the query image from the first learning model, give each of a plurality of gallery images to the first learning model, and acquire a feature vector of each of the gallery images from the first learning model; give the query image to a second learning model, and acquire, from the second learning model, reliability of retrieval when K gallery images having a relatively high possibility of including a subject included in the query image are retrieved from the plurality of the gallery images; retrieve the K gallery images from the plurality of the gallery images; and specify the reliability of retrieval.

Abstract: According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal layer provided above the semiconductor substrate, a second metal layer provided above the first metal layer and containing Ni as a material and a third metal layer provided above the second metal layer and containing Cu or Ni as a material, wherein the second metal layer has a Vickers hardness of 400 Hv or more and is harder than the third metal layer, and the third metal layer is harder than the first metal layer.

Abstract: There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

Abstract: A ceramic heater according to one aspect of the present invention has a cylindrical ceramic heater and an annular metal flange fitted around the ceramic heater. In the ceramic heater, one side of the flange with respect to an axial direction of the heater body is concave in the axial direction to define a concave part. The concave part includes a glass accumulation region filled with a glass material. The glass material in the glass accumulation is fused to the flange and to the heater body.

Abstract: There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

Abstract: A ceramic heater according to one aspect of the present invention has a cylindrical ceramic heater and an annular metal flange fitted around the ceramic heater. In the ceramic heater, one side of the flange with respect to an axial direction of the heater body is concave in the axial direction to define a concave part. The concave part includes a glass accumulation region filled with a glass material. The glass material in the glass accumulation is fused to the flange and to the heater body.

Abstract: A low-vibration floating metal bearing includes a slide bearing. The slide bearing includes oil supply holes formed at six isogonal positions in an isotropic manner with respect to an axial center, and a substantially circular bearing hole having a surface on which at least six regions with different fluid lubrication conditions are formed by inner machining so as to be continuously disposed at isogonal positions in an isotropic manner with isotropic distance with respect to an axial center. Each of the regions with different fluid lubrication conditions forms a narrow flow path that is substantially convex in cross section and extends in an axial center direction in an oil flow path by changing the amount of clearance between the surface of the substantially circular bearing hole and the surface of a substantially circular axis.

Abstract: A low-vibration floating metal bearing includes a slide bearing. The slide bearing includes oil supply holes formed at six isogonal positions in an isotropic manner with respect to an axial center, and a substantially circular bearing hole having a surface on which at least six regions with different fluid lubrication conditions are formed by inner machining so as to be continuously disposed at isogonal positions in an isotropic manner with isotropic distance with respect to an axial center. Each of the regions with different fluid lubrication conditions forms a narrow flow path that is substantially convex in cross section and extends in an axial center direction in an oil flow path by changing the amount of clearance between the surface of the substantially circular bearing hole and the surface of a substantially circular axis.

Abstract: A method for high concentration carburizing and quenching of steel is provided which is carried out by a treatment process including the steps of carbonitriding the steel at temperatures of from about 800 to about 880° C., and subsequently quenching the steel at a temperature higher than the carbonitriding temperature. In the carbonitriding step, the steel is treated with carbon concentrations in a carburizing atmosphere taken as about 0.7 to about 1.2% and with 3 to 8% of ammonia gas (NH3) being added, for example. This dissolves network-like carbide in austenite and, when the austenite is transformed into martensite by quenching, distributes the dissolved carbide in the form of granules approximately uniformly in the martensite.

Abstract: A method for high concentration carburizing and quenching of steel is provided which is carried out by a treatment process including the steps of carbonitriding the steel at temperatures of from about 800 to about 880° C., and subsequently quenching the steel at a temperature higher than the carbonitriding temperature. In the carbonitriding step, the steel is treated with carbon concentrations in a carburizing atmosphere taken as about 0.7 to about 1.2% and with 3 to 8% of ammonia gas (NH3) being added, for example. This dissolves network-like carbide in austenite and, when the austenite is transformed into martensite by quenching, distributes the dissolved carbide in the form of granules approximately uniformly in the martensite.