Abstract: A pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, and a charged particle beam device are provided. The pattern height measurement device includes a calculation device that determines dimensions of a sample, in the height direction, based on first reflected light information obtained by dispersing light reflected from a sample. The calculation device determines second reflected light information based on a formula for the relationship between the value for the dimension in the sample surface direction of a pattern formed upon the sample, obtained by irradiation of a charged particle beam on the sample, the value for the dimension in the height direction of the sample, and reflected light information; compares a second reflected light intensity and the first reflected light information; and outputs the value for the dimension in the height direction of the sample in the second reflected light information.

Abstract: The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

Abstract: The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

Abstract: A purpose of the present invention is to provide: a pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, in the height direction; and a charged particle beam device. In order to achieve the purpose, this pattern height measurement device comprises a calculation device that finds the dimensions of a sample, in the height direction, on the basis of first reflected light information obtained by dispersing light that is reflected when the sample is irradiated with light.

Abstract: The present invention relates to a scanning electron microscope employing a deceleration field forming technology (retarding), more particularly a scanning electron microscope which separates and detects secondary electrons at high efficiency. The object of the present invention is accomplished by providing an electron source, a lens for condensing the primary electron beam which is emitted from said electron source, a detector for detecting electrons which are generated by radiation of the primary electron beam onto a specimen, a first deceleration means for decelerating the primary electron beam which is radiated onto said specimen, a second deceleration means for decelerating electrons which are generated on the specimen, and a deflector for deflecting said electrons which are decelerated by said second decelerating means.

Abstract: The present invention relates to a scanning electron microscope employing a deceleration field forming technology (retarding), more particularly a scanning electron microscope which separates and detects secondary electrons at high efficiency.

Abstract: The present invention relates to a scanning electron microscope employing a deceleration field forming technology (retarding), more particularly a scanning electron microscope which separates and detects secondary electrons at high efficiency. The object of the present invention is accomplished by providing an electron source, a lens for condensing the primary electron beam which is emitted from said electron source, a detector for detecting electrons which are generated by radiation of the primary electron beam onto a specimen, a first deceleration means for decelerating the primary electron beam which is radiated onto said specimen, a second deceleration means for decelerating electrons which are generated on the specimen, and a deflector for deflecting said electrons which are decelerated by said second decelerating means.

Abstract: The present invention relates to a scanning electron microscope employing a deceleration field forming technology (retarding), more particularly a scanning electron microscope which separates and detects secondary electrons at high efficiency.