Patents by Inventor Shou Takashima
Shou Takashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11970644Abstract: Provided is a method for peeling a PSA sheet adhered on a polarizing plate. The PSA sheet has a PSA layer. The PSA layer includes a layer A forming at least one surface of the PSA layer. Of the polarizing plate, the surface to which the PSA sheet is adhered is corona-treated or plasma-treated. The peeling method includes a water-peel step in which the PSA sheet is peeled from the polarizing plate, in a state where an aqueous liquid exits at the interface between the polarizing plate and the PSA sheet at the front line of peeling the PSA sheet from the polarizing plate, with the aqueous liquid allowed to further enter the interface following the movement of the peel front line.Type: GrantFiled: January 28, 2019Date of Patent: April 30, 2024Assignee: NITTO DENKO CORPORATIONInventors: Naofumi Kosaka, Yosuke Shimizu, Satoshi Honda, Taiki Shimokuri, Shou Takarada, Masayuki Satake, Kenichi Okada, Atsushi Takashima, Ginji Mizuhara
-
Patent number: 10094043Abstract: A method for producing a single crystal, wherein the space is adjusted to a predetermined distance by measuring a distance from a reference height position at a predetermined height above a melt surface to a lower end part of an in-furnace structure in a state wherein the in-furnace structure above the melt surface is installed in a pull chamber, obtaining a lower end part position error which is a difference between measured distance and a distance from the previously set reference height position to the lower end part of the in-furnace structure, obtaining a target distance from the melt surface to the reference height position by adding the lower end part position error and a distance from the reference height position to a melt surface position, and adjusting a distance from an initial position of the melt surface to the reference height position such that the target distance is attained.Type: GrantFiled: August 25, 2015Date of Patent: October 9, 2018Assignee: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Shou Takashima, Yuuichi Miyahara, Atsushi Iwasaki
-
Patent number: 9863060Abstract: Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.Type: GrantFiled: November 12, 2014Date of Patent: January 9, 2018Assignee: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Yuuichi Miyahara, Shou Takashima, Yasuhiko Sawazaki, Atsushi Iwasaki
-
Publication number: 20170260646Abstract: A method for producing a single crystal, wherein the space is adjusted to a predetermined distance by measuring a distance from a reference height position at a predetermined height above a melt surface to a lower end part of an in-furnace structure in a state wherein the in-furnace structure above the melt surface is installed in a pull chamber, obtaining a lower end part position error which is a difference between measured distance and a distance from the previously set reference height position to the lower end part of the in-furnace structure, obtaining a target distance from the melt surface to the reference height position by adding the lower end part position error and a distance from the reference height position to a melt surface position, and adjusting a distance from an initial position of the melt surface to the reference height position such that the target distance is attained.Type: ApplicationFiled: August 25, 2015Publication date: September 14, 2017Applicant: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Shou TAKASHIMA, Yuuichi MIYAHARA, Atsushi IWASAKI
-
Publication number: 20160289861Abstract: Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.Type: ApplicationFiled: November 12, 2014Publication date: October 6, 2016Applicant: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Yuuichi MIYAHARA, Shou TAKASHIMA, Yasuhiko SAWAZAKI, Atsushi IWASAKI
-
Patent number: 9234296Abstract: The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.Type: GrantFiled: July 6, 2011Date of Patent: January 12, 2016Assignee: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Shou Takashima, Yuuichi Miyahara, Atsushi Iwasaki, Nobuaki Mitamura, Susumu Sonokawa
-
Publication number: 20130125810Abstract: The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.Type: ApplicationFiled: July 6, 2011Publication date: May 23, 2013Applicant: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Shou Takashima, Yuuichi Miyahara, Atsushi Iwasaki, Nobuaki Mitamura, Susumu Sonokawa
-
Publication number: 20060057696Abstract: The present invention provides O-glycan ?2,8-sialyltransferase which has novel substrate specificity and substrate selectivity, and ?-galactoside ?2,6-sialyltransferase which has novel action and substrate specificity. The sialyltransferase of the present invention can be used as a medicament for suppression of cancer metastasis, prevention of virus infection, suppression of inflammatory response, or activation of neural cells.Type: ApplicationFiled: January 30, 2003Publication date: March 16, 2006Inventors: Shou Takashima, Masafumi Tsujimoto, Shuichi Tsuji