Abstract: The present invention includes devices and methods to form non-volatile memory cells and peripheral devices, with reduced damage to the electron trapping layer and, optionally, reduced thermal exposure during CMOS processing. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: The present invention includes devices and methods to form non-volatile memory cells and peripheral devices, with reduced damage to the electron trapping layer and, optionally, reduced thermal exposure during CMOS processing. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: A silicon nitride read-only memory that prevents the antenna effect is described. The structure of the silicon nitride read-only memory includes a word-line, an electron-trapping layer and a metal protection layer. The word line covers the substrate. The electron-trapping layer is positioned between the word line and the substrate. The metal protection line covers the substrate and electrically connects the word line to a grounding doped region in the substrate. Moreover, the resistance of the metal protection line is higher than that of the word line. The charges generated during the manufacturing process are conducted to the substrate through the metal protection line. The resistance of the metal protection line is also higher than that of the word line. The metal protection line can be burnt out by a high current after the completion of the manufacturing process to ensure a normal operation for the read-only memory.

Abstract: A fabrication method for a nonvolatile memory with a shallow junction is described. A gate structure, comprising an electron-trapping layer and a conductive layer, is formed on a substrate. A doped spacer is formed on the sidewall of the gate structure. Buried bit lines are further formed in the substrate beside the gate structure. Thereafter, thermal process is conducted to diffuse the dopants from the doped spacer into the substrate adjacent to the buried bit lines.