Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 m?·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.

Abstract: [Problems] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities. A method for producing the sputtering target includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere, wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy.

Abstract: Provided are a sputtering target that is capable of forming a Cu—Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm.

Abstract: A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.

Abstract: [Problems] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.

Abstract: Disclosed herein is an electric contactor including, a guide pin, and a contact, wherein the guide pin is made of a conductive material and has a head portion and a shaft portion connected to the head portion, a tip of the shaft portion connected to the head portion being smaller in diameter than the head portion, the contact is made of a conductive and elastic thin plate spring material and has first and second tubular pieces and a plurality of contact pieces, the first tubular piece being wound around the tip of the shaft portion, the second tubular piece being wound around a base end of the shaft portion located on the opposite side of the head portion, and the plurality of contact pieces configured to connect the first and second tubular pieces together.

Abstract: A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.

Abstract: Disclosed herein is an electric contactor including, a guide pin, and a contact, wherein the guide pin is made of a conductive material and has a head portion and a shaft portion connected to the head portion, a tip of the shaft portion connected to the head portion being smaller in diameter than the head portion, the contact is made of a conductive and elastic thin plate spring material and has first and second tubular pieces and a plurality of contact pieces, the first tubular piece being wound around the tip of the shaft portion, the second tubular piece being wound around a base end of the shaft portion located on the opposite side of the head portion, and the plurality of contact pieces configured to connect the first and second tubular pieces together,

Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.

Abstract: The present invention provides a lithium ion polymer battery comprising an electrode having excellent adhesion and electrical conductivity between a current collector and an active material layer, cycle capacity maintaining characteristics being improved, wherein a bonding layer, which bonds the current collector to the active material layer, is stable to an organic solvent in an electrolytic solution and is excellent in storage stability, and also, it is made possible to suppress the corrosion of the current collector by a strong acid such as hydrofluoric acid generated in the battery.

Abstract: The present invention provides a lithium ion polymer battery comprising an electrode having excellent adhesion and electrical conductivity between a current collector and an active material layer, cycle capacity maintaining characteristics being improved, wherein a bonding layer, which bonds the current collector to the active material layer, is stable to an organic solvent in an electrolytic solution and is excellent in storage stability, and also, it is made possible to suppress the corrosion of the current collector by a strong acid such as hydrofluoric acid generated in the battery.