Patents by Inventor Shouji Mizuno

Shouji Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power MOS transistor
    Patent number: 6365932
    Abstract: A new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed. In an up-drain type MOSFET, an n-type well layer has its top surface in which an elongated p-type base region is provided adjacent to a deep n+-type region (drain region). The p-type base region is formed so that it partly overlaps the deep n+ region. A p+-type region (p-type base region) is connected to a source electrode. A surge bypassing diode D1 is thus formed between the source and drain of the MOSFET.
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: April 2, 2002
    Assignee: Denso Corporation
    Inventors: Kenji Kouno, Shouji Mizuno