Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: A semiconductor device includes an enclosure of insulating material having an introduction portion and a discharge portion for an insulating refrigerant and also having an opening, filters mounted on the introduction portion and the discharge portion, respectively, so as to prevent conductive foreign matter from entering the enclosure, a power semiconductor element provided on the outside of the enclosure, a heat sink bonded to the power semiconductor element and extending through the opening and within the enclosure, and an insulator covering the portions of the power semiconductor element and the heat sink lying outside of the enclosure.

Abstract: A semiconductor device includes an enclosure of insulating material having an introduction portion and a discharge portion for an insulating refrigerant and also having an opening, filters mounted on the introduction portion and the discharge portion, respectively, so as to prevent conductive foreign matter from entering the enclosure, a power semiconductor element provided on the outside of the enclosure, a heat sink bonded to the power semiconductor element and extending through the opening and within the enclosure, and an insulator covering the portions of the power semiconductor element and the heat sink lying outside of the enclosure.

Abstract: In audio-decoder apparatus, a circuit substrate common to a 2-channel model and a 5.1-channel model, on which a decoder and a D/A converter with built-in PLL are installed, and which has installing portions and for enabling installation of D/A converters without built-in PLL. The line connection modes of signal lines connecting the output terminal of the decoder to the input terminals of each D/A converter can be changed by a switching apparatus, corresponding to the channel model, thus it becomes possible to realize D/A converters without built-in PLL having better audio performance under a line connection mode desired for an improved audio performance. Therefore, a good audio performance can be secured, while a common circuit substrate can be used for a variety of channel models, which is advantageous in view of fabrication cost.

Abstract: In audio-decoder apparatus, a circuit substrate 12 common to a 2-channel model and a 5.1-channel model, on which a decoder 3 and a D/A converter 4 with built-in PLL are installed, and which has installing portions 5a and 6a for enabling installation of D/A converters without built-in PLL. The line connection modes of signal lines connecting the output terminal of the decoder 3 to the input terminals of each D/A converter can be changed by a switching apparatus 13, corresponding to the channel model, thus it becomes possible to realize D/A converters without built-in PLL having better audio performance under a line connection mode desired for an improved audio performance. Therefore, a good audio performance can be secured, while a common circuit substrate can be used for a variety of channel models, which is advantageous in view of fabrication cost.