Patents by Inventor Shouleh Nikzad
Shouleh Nikzad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8558234Abstract: Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.Type: GrantFiled: February 11, 2011Date of Patent: October 15, 2013Assignee: California Institute of TechnologyInventors: Shouleh Nikzad, Chris Martin, Michael E. Hoenk
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Publication number: 20130175430Abstract: A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel.Type: ApplicationFiled: June 22, 2012Publication date: July 11, 2013Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Thomas J. Cunningham, Bruce R. Hancock, Chao Sun, Todd J. Jones, Matthew R. Dickie, Shouleh Nikzad, Michael E. Hoenk, Christopher J. Wrigley, Kenneth W. Newton, Bedabrata Pain
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Publication number: 20130109977Abstract: A medical imaging system and method. A UV/visible camera uses a back illuminated silicon imaging detector to observe a surface of a brain of a human subject in vivo during brain surgery for excision of a cancerous tumor. The detector can be a CCD detector or a CMOS detector. Under UV illumination, the camera can record images that can be processed to detect the location and extent of a cancerous tumor because the presence of auto-fluorescent NADH variations can be detected between normal and cancerous cells. The image data is processed in a general purpose programmable computer. In some instances, an image is also taken using visible light, and the identified cancerous region is displayed as an overlay on the visible image.Type: ApplicationFiled: November 1, 2012Publication date: May 2, 2013Applicant: California Institute of TechnologyInventors: Shouleh Nikzad, Michael E. Hoenk, Todd J. Jones, Samuel R. Cheng
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Publication number: 20120168891Abstract: High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.Type: ApplicationFiled: October 25, 2011Publication date: July 5, 2012Applicant: California Institute of TechnologyInventors: Frank Greer, Todd J. Jones, Shouleh Nikzad, Michael E. Hoenk
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Patent number: 8163094Abstract: A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.Type: GrantFiled: July 23, 2009Date of Patent: April 24, 2012Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: H. Frank Greer, Todd J. Jones, Richard P. Vasquez, Michael E. Hoenk, Matthew R. Dickie, Shouleh Nikzad
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Publication number: 20110316110Abstract: A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.Type: ApplicationFiled: June 23, 2011Publication date: December 29, 2011Applicant: California Institute of TechnologyInventors: Michael E. Hoenk, Frank Greer, Shouleh Nikzad
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Publication number: 20110256655Abstract: Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.Type: ApplicationFiled: February 11, 2011Publication date: October 20, 2011Applicant: California Institute of TechnologyInventors: Shouleh Nikzad, Chris Martin, Michael E. Hoenk
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Publication number: 20110169160Abstract: A method, apparatus, system, and device provide the ability to form one or more solder bumps on one or more materials. The solder bumps are reflowed. During the reflowing, the solder bumps are monitored in real time. The reflow is controlled in real time, thereby controlling a morphology of each of the solder bumps. Further, the wetting of the solder bumps to a surface of the materials is controlled in real time.Type: ApplicationFiled: January 13, 2011Publication date: July 14, 2011Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Frank Greer, Todd J. Jones, Shouleh Nikzad, Thomas J. Cunningham, Edward R. Blazejewski, Matthew R. Dickie, Michael E. Hoenk
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Publication number: 20110169119Abstract: Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties.Type: ApplicationFiled: January 13, 2011Publication date: July 14, 2011Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Frank Greer, Shouleh Nikzad
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Publication number: 20110140246Abstract: Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.Type: ApplicationFiled: December 10, 2010Publication date: June 16, 2011Applicant: California Institute of TechnologyInventors: Michael E. Hoenk, Shouleh Nikzad, Todd J. Jones, Frank Greer, Alexander G. Carver
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Patent number: 7800040Abstract: A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius.Type: GrantFiled: September 21, 2007Date of Patent: September 21, 2010Assignee: California Institute of TechnologyInventors: Jordana Blacksberg, Michael Eugene Hoenk, Shouleh Nikzad
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Patent number: 7786421Abstract: The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface.Type: GrantFiled: September 13, 2004Date of Patent: August 31, 2010Assignee: California Institute of TechnologyInventors: Shouleh Nikzad, Michael Hoenk, Todd Jones
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Patent number: 7592747Abstract: A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.Type: GrantFiled: February 9, 2005Date of Patent: September 22, 2009Assignee: The United States of America as represented by the National Aeronautics and Space AdministrationInventors: Robert A. Beach, Shouleh Nikzad, Robert P. Strittmatter, Lloyd Douglas Bell
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Publication number: 20080111056Abstract: A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius.Type: ApplicationFiled: September 21, 2007Publication date: May 15, 2008Inventors: Jordana Blacksberg, Michael Eugene Hoenk, Shouleh Nikzad
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Publication number: 20050109918Abstract: The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface.Type: ApplicationFiled: September 13, 2004Publication date: May 26, 2005Inventors: Shouleh Nikzad, Michael Hoenk, Todd Jones
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Patent number: 6403963Abstract: The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.Type: GrantFiled: September 29, 1998Date of Patent: June 11, 2002Assignee: California Institute of TechnologyInventors: Shouleh Nikzad, Michael E. Hoenk, Michael H. Hecht
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Patent number: 6346700Abstract: A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.Type: GrantFiled: April 11, 2000Date of Patent: February 12, 2002Assignee: California Institute of TechnologyInventors: Thomas J. Cunningham, Eric R. Fossum, Shouleh Nikzad, Bedabrata Pain, George A. Soli
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Patent number: 6278119Abstract: The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.Type: GrantFiled: October 21, 1998Date of Patent: August 21, 2001Assignee: California Institute of TechnologyInventors: Shouleh Nikzad, Donald R. Croley, Gerald B. Murphy
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Patent number: 6107619Abstract: A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.Type: GrantFiled: July 13, 1998Date of Patent: August 22, 2000Assignee: California Institute of TechnologyInventors: Thomas J. Cunningham, Eric R. Fossum, Shouleh Nikzad, Bedabrata Pain, George A. Soli