Abstract: A semiconductor memory device comprises a memory cell array and a control circuit. The memory cell array has a plurality of memory cells arranged in rows and columns. The memory cells store data and are selected according to address signals. The control circuit is configured to receive a clock signal and a first control signal, and output a plurality of data in response to the clock signal after the first control signal is asserted. After the first control signal is asserted, an internal signal which responds to the clock signal transits N times (N is a positive integer and greater than or equal to 2), then output of the data is started. At least one of the data is output at the transition after the output begins.

Abstract: A semiconductor memory device comprises a memory cell array and a control circuit. The memory cell array has a plurality of memory cells arranged in rows and columns. The memory cells store data and are selected according to address signals. The control circuit is configured to receive a clock signal and a first control signal, and output a plurality of data in response to the clock signal after the first control signal is asserted. After the first control signal is asserted, an internal signal which responds to the clock signal transits N times (N is a positive integer and greater than or equal to 2), then output of the data is started. At least one of the data is output at the transition after the output begins.

Abstract: A semiconductor memory device comprises a memory cell array and a control circuit. The memory cell array has a plurality of memory cells arranged in rows and columns. The memory cells store data and are selected according to address signals. The control circuit is configured to receive a clock signal and a first control signal, and output a plurality of data in response to the clock signal after the first control signal is asserted. After the first control signal is asserted, an internal signal which responds to the clock signal transits N times (N is a positive integer and greater than or equal to 2), then output of the data is started. At least one of the data is output at the transition after the output begins.

Abstract: A method of accessing a semiconductor device that operates in synchronism with a clock signal, including fetching information indicating a memory cell location in a memory cell array in synchronism with the clock signal, determining first data of a plurality of data to be transferred sequentially, decoding the information indicating the memory cell location in the memory cell array and designating the memory cell, receiving data stored in the memory cell designated by the information indicating the memory cell location in the memory cell array in synchronism with the clock signal after a predetermined number of cycles of the clock signal, and outputting a plurality of data stored in the memory cells in synchronism with the clock signal and storing a plurality of input data in the memory cells in synchronism with the clock signal.

Abstract: A method of accessing a semiconductor device that operates in synchronism with a clock signal, including fetching information indicating a memory cell location in a memory cell array in synchronism with the clock signal, determining first data of a plurality of data to be transferred sequentially, decoding the information indicating the memory cell location in the memory cell array and designating the memory cell, receiving data stored in the memory cell designated by the information indicating the memory cell location in the memory cell array in synchronism with the clock signal after a predetermined number of cycles of the clock signal, and outputting a plurality of data stored in the memory cells in synchronism with the clock signal and storing a plurality of input data in the memory cells in synchronism with the clock signal.

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor device includes a memory cell array, a counting section, a control section, a specification section and a data input/output section. The counting section configured to count transition of the clock signal and determine first data of a plurality of data to be transferred sequentially. The control section configured to fetch information indicating a memory cell location in the memory cell array in response to a counting result of the counting section and control consecutive input and output of a plurality of data stored in the memory cell array every cycle of the clock signal. The specification section configured to decode the information fetched by the control section and designate a memory cell in the memory cell array. The data input/output section configured to input data to or output data from the memory cell designated by the specification section, wherein input and output of the data are time-shared.

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix: a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the Consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for entering them in an active state; a data input/output (I/O) circuit .

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for entering them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic clo

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for entering them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic clo

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix: a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cl

Abstract: A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for setting them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic cloc

Abstract: A semiconductor memory device, including a memory cell array having a plurality of memory cells arranged in rows and columns, the memory cells storing data and being selected according to address signals. The device includes a control unit which receives a clock signal and a first control, or trigger, signal for outputting a plurality of the data in synchronism with the clock signal after the first control signal is asserted. The output of the data beginning after a number of clock cycles (N) of the clock signal (N being a positive integer .gtoreq.2) after the first control signal is asserted, a different one of the data being output at each of the clock cycles after the output begins until the plurality of data is output.

Abstract: A semiconductor memory device includes a memory cell having a plurality of memory cells arranged in rows and columns, the memory cells storing data and being selected according to address signals. The device also includes a control unit to receive a clock signal and a first control, or trigger, signal for outputting a plurality of the data in synchronism with the clock signal after the first control signal is asserted. The output of the data begins a number of clock cycles (N) of the clock signal (N being a positive integer.gtoreq.2) after the first control signal is asserted, a different one of the data being output at each of the clock cycles after the output begins until the plurality of data is output.