Abstract: Provided is a heat treatment device including: a laser oscillator configured to produce a laser; one or more optical systems each configured to irradiate an object to be treated with the laser produced from the laser oscillator; and a rotating table on which the object is to be mounted. When a reaching temperature of the object, at which an activation rate of the object reaches a target value through one-time irradiation with the laser, is set as a first temperature, a second temperature lower than the first temperature is set as a target value of the reaching temperature of the object, and the object is repeatedly irradiated with the laser from one of the one or more optical systems two or more times.

Abstract: In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to about 200 ?s and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape.

Abstract: In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to 200 ?s and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape. The laser beam operates at a frequency of more than 67 Hz, and the spot of the laser beam is sequentially moved to different drilling positions for each pulse. After all of many drilling positions in the range of a scan vision are irradiated with the laser beam pulse by pulse, or after the elapse of a time of 15 ms or more from irradiation of the first drilling position, the laser spot is returned to the first drilling position. The spot is sequentially moved once again, and the movement is repeated several times.

Abstract: A laser material processing method for processing a printed wiring board to form a blind hole, a groove or a through hole by applying a laser beam to an insulating layer of the printed wiring board includes a first step of processing the insulating layer at a predetermined energy density, a second step of hardening the insulating layer by applying a laser beam at a lower energy density than the predetermined energy density of the first step around a processed portion processed in the first step, and a third step of removing the residual smear.

Abstract: A laser machining device according to the invention is provided with a laser oscillator for generating a laser beam, a main deflecting galvannometer mirror, an F? lens, and a sub-deflecting means arranged in an optical path between the laser oscillator and the main deflecting galvanometer mirror. A means for splitting a laser beam is provided, and the sub-deflecting means is inserted into the optical path of one of the split laser beams. At the same time, both the split laser beams are incident from the same main deflecting galvannometer mirror to the F? lens, and a numerical aperture in the optical system constituted by the main deflecting galvannometer mirror, the F? lens, and an object is set to be not more than 0.08.

Abstract: A method of the present invention is a method for processing a multilayer material, in which one or more conductor layers and insulating layers are layered, with a laser beam. The method includes the step of irradiating the conductor layer with a first laser beam to form a hole at a processing point in the conductor layer, and the step of irradiating the hole with a second laser beam to process the insulating layer, layered on the conductor layer. The second laser beam has a smaller beam diameter at the processing point than the first laser beam.

Abstract: A laser inspection apparatus has a light source 13 for outputting laser beam, application means 5, 33, 34 for irradiating the laser beam 7 output from the light source 13 to any desired position of a detected body 21, first detection means 2 for detecting fluorescence 8 generated from the detected body 21 to which the laser beam 7 is applied, and second detection means 3 for detecting reflected light 8 scattered on a surface of the detected body 21 to which the laser beam 7 is applied.

Abstract: As a scanning device for positioning the irradiation position of the laser beam emitted from a laser oscillator at a position of arbitrary coordinates in the commanded mutually orthogonal X-axis direction and Y-axis direction, two galvanomirrors having mutually orthogonal rotary axes and a scan lens are provided, and the light generated from a printed circuit board irradiated with laser beam is detected by a detector, and approval or rejection of inspection result at each position of coordinates is judged on the basis of the output signal of the detector.

Abstract: In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to about 200 &mgr;s and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape.

Abstract: A laser machining device according to the invention is provided with a laser oscillator for generating a laser beam, a main deflecting galvannometer mirror, an F&thgr; lens, and a sub-deflecting means arranged in an optical path between the laser oscillator and the main deflecting galvanometer mirror. A means for splitting a laser beam is provided, and the sub-deflecting means is inserted into the optical path of one of the split laser beams. At the same time, both the split laser beams are incident from the same main deflecting galvannometer mirror to the F&thgr; lens, and a numerical aperture in the optical system constituted by the main deflecting galvannometer mirror, the F&thgr; lens, and an object is set to be not more than 0.08.

Abstract: In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to about 200 &mgr;s and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape.

Abstract: In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to about 200 &mgr;s and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape.

Abstract: A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.

Abstract: A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.

Abstract: A laser cutting method with which cutting faults at the time of cutting condition changing are substantially eliminated. Impingement of the laser beam on the workpiece is stopped when the laser beam reaches a position along the path where the first cutting conditions are to be changed to second cutting conditions. The laser beam is then retracted along the path a predetermined distance from the position where the first cutting conditions are to be switched to the second cutting conditions. After a delay time, the laser beam is again moved along the predetermined path to cut the workpiece under the second cutting conditions. The retraction distance is set in accordance with the thickness of the workpiece. Also, an assist gas may be sprayed on the workpiece in the vicinity of the cutting path while impingement of the beam is stopped.

Abstract: An insulated wire having a conductor coated with insulating material wherein a light absorbing layer is provided between the conductor and the insulating material, thereby an insulating coating can be easily peeled off by means of laser.

Abstract: A process is provided for working a base material which essentially consists of a ceramic material. The process includes an irradiation process of irradiating a laser beam or an electron beam to the base material in order to form an affected portion having cracks in the base material and a removing process for removing the affected portion. The ceramic material includes an oxide ceramic material (for example, alumina and forsterite) and a carbide ceramic material. The shape and the depth of the portion to be worked are controlled by the scanning of the laser beam or the electron beam. The removing process can include any one of the processes of vibrating the base material, applying a thermal shock to the base material and etching the base material. In accordance with the present invention, a base material which essentially consists of an oxide ceramic material or a carbide ceramic material can be worked with high aspect ratio and in a shorter period of time than in a conventional process.