Abstract: A non-volatile storage system comprises a group of non-volatile memory cells, and one or more control circuits in communication with the group. The one or more control circuits are configured to perform a plurality of passes to revise a read reference signal based on comparisons of numbers of non-volatile memory cells in the group having a value for a physical property (e.g., threshold voltage or resistance) in adjacent regions. With each pass the adjacent regions are smaller. The one or more control circuits are configured to establish a final read reference signal based on a signal associated with one of the adjacent regions on a final pass of the plurality of passes. The one or more control circuits are configured to use the final read reference signal to distinguish between two adjacent data states stored in the group.

Abstract: A non-volatile storage system comprises a group of non-volatile memory cells, and one or more control circuits in communication with the group. The one or more control circuits are configured to perform a plurality of passes to revise a read reference signal based on comparisons of numbers of non-volatile memory cells in the group having a value for a physical property (e.g., threshold voltage or resistance) in adjacent regions. With each pass the adjacent regions are smaller. The one or more control circuits are configured to establish a final read reference signal based on a signal associated with one of the adjacent regions on a final pass of the plurality of passes. The one or more control circuits are configured to use the final read reference signal to distinguish between two adjacent data states stored in the group.

Abstract: A non-volatile storage system comprises a group of non-volatile memory cells, and one or more control circuits in communication with the group. The one or more control circuits are configured to perform a plurality of passes to revise a read reference signal based on comparisons of numbers of non-volatile memory cells in the group having a value for a physical property (e.g., threshold voltage or resistance) in adjacent regions. With each pass the adjacent regions are smaller. The one or more control circuits are configured to establish a final read reference signal based on a signal associated with one of the adjacent regions on a final pass of the plurality of passes. The one or more control circuits are configured to use the final read reference signal to distinguish between two adjacent data states stored in the group.

Abstract: A non-volatile storage system comprises a group of non-volatile memory cells, and one or more control circuits in communication with the group. The one or more control circuits are configured to perform a plurality of passes to revise a read reference signal based on comparisons of numbers of non-volatile memory cells in the group having a value for a physical property (e.g., threshold voltage or resistance) in adjacent regions. With each pass the adjacent regions are smaller. The one or more control circuits are configured to establish a final read reference signal based on a signal associated with one of the adjacent regions on a final pass of the plurality of passes. The one or more control circuits are configured to use the final read reference signal to distinguish between two adjacent data states stored in the group.