Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, ?-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract: New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, &agr;-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract: New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is difunctional and can be directly incorporated (either physically or chemically) into photolithographic compositions such as anti-reflective coatings (ARC) and contact or via hole fill materials. The preferred light attenuating compound comprises functional groups electronically isolated from the light absorbing moieties of the compound. As a result, the spectral properties of the compound are not negatively affected when the functional groups form bonds with other compounds during polymerization or crosslinking.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract: New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.