Abstract: Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Abstract: Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Abstract: Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Abstract: A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

Abstract: An apparatus incorporating a multi-surface heat sink may comprise an integrated circuit die, a heat spreader, a plate element, and a heat sink. The heat spreader may be positioned above the IC die. The plate element may be positioned above the heat spreader. A bottom surface of the heat sink may have a first region positioned above the plate element. One or more spring elements may be positioned between the plate element and the first region of the bottom surface of the heat sink. The one or more spring elements may be under a compressive load between the plate element and the heat sink. One or more thermal conduit elements may be secured to both the plate element and the heat sink. The one or more thermal conduit elements may apply at least a part of the compressive load between the plate element and the heat sink.

Abstract: Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader.

Abstract: A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.

Abstract: Embodiments include semiconductor packages. A semiconductor package includes a first die and a second die on a package substrate, and an integrated heat spreader (IHS) over the first die, the second die, and the package substrate, wherein the IHS has a lid and a plurality of sidewalls. The semiconductor package also includes a plurality of conductive slugs in the lid of the IHS. The lid of the IHS has a bottom surface that is coplanar to bottom surfaces of the conductive slugs. The conductive slugs are comprised of high-k thermal conductive materials, including cubic boron nitride, hexagonal boron nitride, graphite, carbon-based materials, diamonds, or diamond-based materials. The bottom surfaces of the conductive slugs are on a top surface of the first die and a top surface of the second die. The IHS is comprised of thermal conductive materials, including aluminum, copper, copper-based metals, or alloys.

Abstract: Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Abstract: A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

Abstract: An apparatus incorporating a multi-surface heat sink may comprise an integrated circuit die, a heat spreader, a plate element, and a heat sink. The heat spreader may be positioned above the IC die. The plate element may be positioned above the heat spreader. A bottom surface of the heat sink may have a first region positioned above the plate element. One or more spring elements may be positioned between the plate element and the first region of the bottom surface of the heat sink. The one or more spring elements may be under a compressive load between the plate element and the heat sink. One or more thermal conduit elements may be secured to both the plate element and the heat sink. The one or more thermal conduit elements may apply at least a part of the compressive load between the plate element and the heat sink.

Abstract: A microelectronic device may include a substrate, a first component, a second component, a slug, a heat spreader, and a heatsink. The substrate may include a plurality of electrically conductive elements. The first component may be coupled to the substrate. The second component may be coupled to the substrate. The slug may be thermally coupled to the second component. The heat spreader may be in contact with the substrate, where the heat spreader may be thermally coupled to the first component. The heatsink may be thermally coupled to the heat spreader and the slug.

Abstract: Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader.

Abstract: A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.

Abstract: Disclosed herein are embodiments of sintered heat spreaders with inserts and related devices and methods. In some embodiments, a heat spreader may include: a frame including aluminum and a polymer binder; an insert disposed in the frame, wherein the insert has a thermal conductivity higher than a thermal conductivity of the frame; and a recess having at least one sidewall formed by the frame. The polymer binder may be left over from sintering frame material and insert material to form the heat spreader.

Abstract: Embedded air core inductors are described for integrated circuit package substrates. The substrates have a thermal conductor for the inductors. One example includes a package substrate to carry an integrated circuit die, the package substrate having a plurality of top side pads to connect to the die on a top side and a plurality of bottom side pads to connect to an external component on a bottom side. An inductor is embedded within the package substrate, A thermal conductor is embedded within the package substrate adjacent to the inductor to conduct heat away from the inductor, and a heat sink is thermally coupled to the thermal conductor to receive the heat from the conductor.