Patents by Inventor Shriram Mangipudi

Shriram Mangipudi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER WITH OXIDE OR OXYNITRIDE SEED LAYER
    Publication number: 20230345846
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: March 1, 2023
    Publication date: October 26, 2023
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • METHOD OF MAKING HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER
    Publication number: 20230329125
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: May 22, 2023
    Publication date: October 12, 2023
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Method of making high critical temperature metal nitride layer
    Patent number: 11678589
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: June 13, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • High critical temperature metal nitride layer with oxide or oxynitride seed layer
    Patent number: 11600761
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: March 7, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER WITH OXIDE OR OXYNITRIDE SEED LAYER
    Publication number: 20220052248
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: February 17, 2021
    Publication date: February 17, 2022
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • METHOD OF MAKING HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER
    Publication number: 20220013707
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: February 17, 2021
    Publication date: January 13, 2022
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • METHOD OF MAKING HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER
    Publication number: 20220013708
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.
    Type: Application
    Filed: February 17, 2021
    Publication date: January 13, 2022
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla