Abstract: A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.

Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.

Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.

Abstract: A semiconductor structure includes a solder resist layer disposed on a circuit substrate and partially covering contact pads of the circuit substrate, and external terminals disposed on the solder resist layer and extending through the solder resist layer to land on the contact pads. The external terminals include a first external terminal and a second external terminal which have different heights. A first interface between the first external terminal and corresponding one of the contact pads underlying the first external terminal is less than a second interface between the second external terminal and another corresponding one of the contact pads underlying the second external terminal.

Abstract: A semiconductor package includes a substrate, a stacked structure, an encapsulation material, a lid structure, and a coupler. The stacked structure is disposed over and bonded to the substrate. The encapsulation material partially encapsulates the stacked structure. The lid structure is disposed on the substrate, wherein the lid structure surrounds the stacked structure and covers a top surface of the stacked structure. The coupler is bonded to the stacked structure, wherein a portion of the coupler penetrates through and extends out of the lid structure.

Abstract: A semiconductor package includes a substrate, a stacked structure, an encapsulation material, a lid structure, and a coupler. The stacked structure is disposed over and bonded to the substrate. The encapsulation material partially encapsulates the stacked structure. The lid structure is disposed on the substrate, wherein the lid structure surrounds the stacked structure and covers a top surface of the stacked structure. The coupler is bonded to the stacked structure, wherein a portion of the coupler penetrates through and extends out of the lid structure.

Abstract: A semiconductor device includes a substrate, an electronic component, a stiffener ring and an adhesive ring. The substrate has a first surface and a second surface opposite to the first surface. The electronic component is over the first surface of the substrate. The stiffener ring is over the first surface of the substrate. The stiffener ring includes a plurality of side parts and a plurality of corner parts coupled to the side parts. Heights of the corner parts are less than heights of the side parts. The adhesive ring is interposed between the first surface of the substrate and the stiffener ring. The adhesive ring includes a plurality of side portions and a plurality of corner portions coupled to the side portions. Thicknesses of the side portions are less than thicknesses of the corner portions.

Abstract: A semiconductor device includes a substrate, an electronic component, a ring structure and an adhesive layer. The substrate has a first surface. The electronic component is over the first surface of the substrate. The ring structure is over the first surface of the substrate, wherein the ring structure includes a first part having a first height, and a second part recessed from the bottom surface and having a second height lower than the first height. The adhesive layer is interposed between the first part of the ring structure and the substrate, and between the second part of the ring structure and the substrate.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.

Abstract: A semiconductor package includes a substrate, a stacked structure, an encapsulation material, a lid structure, and a coupler. The stacked structure is disposed over and bonded to the substrate. The encapsulation material partially encapsulates the stacked structure. The lid structure is disposed on the substrate, wherein the lid structure surrounds the stacked structure and covers a top surface of the stacked structure. The coupler is bonded to the stacked structure, wherein a portion of the coupler penetrates through and extends out of the lid structure.

Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.

Abstract: A semiconductor package includes a substrate, a stacked structure, an encapsulation material, a lid structure, and a coupler. The stacked structure is disposed over and bonded to the substrate. The encapsulation material partially encapsulates the stacked structure. The lid structure is disposed on the substrate, wherein the lid structure surrounds the stacked structure and covers a top surface of the stacked structure. The coupler is bonded to the stacked structure, wherein a portion of the coupler penetrates through and extends out of the lid structure.

Abstract: A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.

Abstract: A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.

Abstract: A method for forming a chip package structure is provided. The method includes bonding a chip to a first surface of a first substrate. The method includes forming a dummy bump over a second surface of the first substrate. The first surface is opposite the second surface, and the dummy bump is electrically insulated from the chip. The method includes cutting through the first substrate and the dummy bump to form a cut substrate and a cut dummy bump. The cut dummy bump is over a corner portion of the cut substrate, a first sidewall of the cut dummy bump is substantially coplanar with a second sidewall of the cut substrate, and a third sidewall of the cut dummy bump is substantially coplanar with a fourth sidewall of the cut substrate.

Abstract: A semiconductor device includes an electronic component, a package, a substrate and a plurality of first conductors and second conductors. The package is over the electronic component. T substrate is between the electronic component and the package. The substrate includes a first portion covered by the package, and a second portion protruding out of an edge of the package and uncovered by the package. The first conductors and second conductors are between and electrically connected to the electronic component and the substrate. A width of a second conductor of the plurality of second conductors is larger than a width of a first conductor of the plurality of first conductors, the first conductors are disposed between the second portion of the substrate and the electronic component, and the second conductors are disposed between the first portion of the substrate and the electronic component.

Abstract: A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.

Abstract: A semiconductor device includes a substrate, an electronic component, a ring structure and an adhesive layer. The substrate has a first surface. The electronic component is over the first surface of the substrate. The ring structure is over the first surface of the substrate, wherein the ring structure includes a first part having a first height, and a second part recessed from the bottom surface and having a second height lower than the first height. The adhesive layer is interposed between the first part of the ring structure and the substrate, and between the second part of the ring structure and the substrate.

Abstract: A method for forming a chip package structure is provided. The method includes bonding a chip to a first surface of a first substrate. The method includes forming a dummy bump over a second surface of the first substrate. The first surface is opposite the second surface, and the dummy bump is electrically insulated from the chip. The method includes cutting through the first substrate and the dummy bump to form a cut substrate and a cut dummy bump. The cut dummy bump is over a corner portion of the cut substrate, a first sidewall of the cut dummy bump is substantially coplanar with a second sidewall of the cut substrate, and a third sidewall of the cut dummy bump is substantially coplanar with a fourth sidewall of the cut substrate.

Abstract: A semiconductor device includes a substrate, an electronic component, a ring structure and an adhesive layer. The substrate has a first surface. The electronic component is over the first surface of the substrate. The ring structure is over the first surface of the substrate, wherein the ring structure includes a first part having a first height, and a second part recessed from the bottom surface and having a second height lower than the first height. The adhesive layer is interposed between the first part of the ring structure and the substrate, and between the second part of the ring structure and the substrate.