Patents by Inventor Shu-Hsuan Chih

Shu-Hsuan Chih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9147678
    Abstract: The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: September 29, 2015
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Kai Kang, Sheng-Yuan Hsueh, Shu-Hsuan Chih, Po-Kuang Hsieh, Chia-Chen Sun, Po-Cheng Huang, Shih-Chieh Hsu, Chi-Horn Pai, Yao-Chang Wang, Jie-Ning Yang, Chi-Sheng Tseng, Po-Jui Liao, Kuang-Hung Huang, Shih-Chang Chang
  • Patent number: 8890551
    Abstract: A test key structure for use in measuring step height includes a substrate, and a pair of test contacts. The substrate includes an isolation region and a diffusion region. The test contact pair includes a first test contact and a second test contact for measuring electrical resistances. The first test contact is disposed on the diffusion region and the second test contact is disposed on the isolation region.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: November 18, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Kai Kang, Shu-Hsuan Chih, Sheng-Yuan Hsueh, Chia-Chen Sun, Po-Kuang Hsieh, Chi-Horn Pai, Shih-Chieh Hsu
  • Publication number: 20130168816
    Abstract: The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.
    Type: Application
    Filed: January 4, 2012
    Publication date: July 4, 2013
    Inventors: Chih-Kai Kang, Sheng-Yuan Hsueh, Shu-Hsuan Chih, Po-Kuang Hsieh, Chia-Chen Sun, Po-Cheng Huang, Shih-Chieh Hsu, Chi-Horn Pai, Yao-Chang Wang, Jie-Ning Yang, Chi-Sheng Tseng, Po-Jui Liao, Kuang-Hung Huang, Shih-Chang Chang
  • Publication number: 20130106448
    Abstract: A test key structure for use in measuring step height includes a substrate, and a pair of test contacts. The substrate includes an isolation region and a diffusion region. The test contact pair includes a first test contact and a second test contact for measuring electrical resistances. The first test contact is disposed on the diffusion region and the second test contact is disposed on the isolation region.
    Type: Application
    Filed: November 1, 2011
    Publication date: May 2, 2013
    Inventors: Chih-Kai Kang, Shu-Hsuan Chih, Sheng-Yuan Hsueh, Chia-Chen Sun, Po-Kuang Hsieh, Chi-Horn Pai, Shih-Chieh Hsu