Abstract: A substrate processing apparatus includes: a chamber; a substrate support disposed in the chamber; a plasma generator configured to form a plasma in the chamber; and a controller configured to perform a process including: placing a substrate on the substrate support, the substrate including a first film, a second film and a third film, the first film containing a silicon, the second film having a second aperture, the first film being disposed between the second film and the third film; cooling the substrate to ?30° C. or less; etching the first film through the second aperture with a plasma formed from a first process gas containing a fluorocarbon gas, to form a first aperture of a tapered shape in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture; and etching the third film through the first aperture.

Abstract: A substrate processing method is for processing a substrate that includes a first region and a second region with compositions different from each other. The substrate processing method includes (a) preferentially forming, by a substrate processing apparatus, a first deposit on the first region; (b) forming, after (a), a second deposit on the second region, the second deposit containing fluorine and the second deposit being different from the first deposit; and (c) removing, after (b), the second deposit and at least a part of the second region. The steps (a)-(c) are repeated, in order, in a case that a stop condition is not satisfied.

Abstract: There is provided a substrate processing system. The system comprises: a substrate processing device having a processing container configured to perform processing of a substrate, and a direct current (DC) power source configured to apply a DC voltage to a specific part in the processing container; and a controller configured to control the substrate processing device. A process performed by the controller includes a process of acquiring desired process conditions and a real value of the DC voltage measured during processing of the substrate based on the process conditions, and a process of creating a regression analysis equation which calculates an estimated value of the DC voltage using a plurality of conditions among the process conditions as explanatory variables based on the acquired process conditions and real value of the DC voltages.

Abstract: A substrate processing apparatus includes: a chamber; a substrate support disposed in the chamber; a plasma generator configured to form a plasma in the chamber; and a controller configured to perform a process including: placing a substrate on the substrate support, the substrate including a first film, a second film and a third film, the first film containing a silicon, the second film having a second aperture, the first film being disposed between the second film and the third film; cooling the substrate to ?30° C. or less; etching the first film through the second aperture with a plasma formed from a first process gas containing a fluorocarbon gas, to form a first aperture of a tapered shape in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture; and etching the third film through the first aperture.

Abstract: A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to ?30° C. or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.

Abstract: A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to ?30° C. or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.