Patents by Inventor Shu KUSANO
Shu KUSANO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11705313Abstract: An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount of the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.Type: GrantFiled: March 5, 2021Date of Patent: July 18, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Hirayama, Shu Kusano
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Patent number: 11183374Abstract: There is provision of a plasma processing apparatus including a chamber; a gas inlet for supplying a first gas containing fluorine and supplying a second gas into the chamber; a plasma generator configured to generate a plasma from the first gas and the second gas supplied into the chamber; an optical emission spectrometer (OES) configured to measure light emission intensities of first radicals and second radicals in the plasma, the first radicals originating from the first gas, the second radicals originating from the second gas; an expendable part disposed in the chamber; and a processor configured to determine a wastage rate of the expendable part based on the measured light emission intensities of the first radicals and the second radicals.Type: GrantFiled: July 22, 2020Date of Patent: November 23, 2021Assignee: Tokyo Electron LimitedInventors: Shu Kusano, Yusuke Hirayama
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Patent number: 11133157Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.Type: GrantFiled: April 19, 2019Date of Patent: September 28, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano
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Publication number: 20210280401Abstract: An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.Type: ApplicationFiled: March 5, 2021Publication date: September 9, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke HIRAYAMA, Shu KUSANO
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Publication number: 20200350148Abstract: There is provision of a plasma processing apparatus including a chamber; a gas inlet for supplying a first gas containing fluorine and supplying a second gas into the chamber; a plasma generator configured to generate a plasma from the first gas and the second gas supplied into the chamber; an optical emission spectrometer (OES) configured to measure light emission intensities of first radicals and second radicals in the plasma, the first radicals originating from the first gas, the second radicals originating from the second gas; an expendable part disposed in the chamber; and a processor configured to determine a wastage rate of the expendable part based on the measured light emission intensities of the first radicals and the second radicals.Type: ApplicationFiled: July 22, 2020Publication date: November 5, 2020Inventors: Shu Kusano, Yusuke Hirayama
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Patent number: 10763089Abstract: There is provision of a method of determining wastage including: processing a substrate using a plasma generated by multiple gases including fluorine gas; obtaining light emission intensity of each gas of the multiple gases including fluorine gas from the plasma, by an optical emission spectrometer (OES); and calculating a wastage rate of a particular expendable part from the obtained light emission intensity of each gas of the multiple gases including fluorine gas, with reference to a storage section storing a wastage rate of the particular expendable part in association with the light emission intensity of each gas of the multiple gases including fluorine gas.Type: GrantFiled: December 14, 2017Date of Patent: September 1, 2020Assignee: Tokyo Electron LimitedInventors: Shu Kusano, Yusuke Hirayama
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Publication number: 20190378698Abstract: There is provision of a method of determining wastage including: processing a substrate using a plasma generated by multiple gases including fluorine gas; obtaining light emission intensity of each gas of the multiple gases including fluorine gas from the plasma, by an optical emission spectrometer (OES); and calculating a wastage rate of a particular expendable part from the obtained light emission intensity of each gas of the multiple gases including fluorine gas, with reference to a storage section storing a wastage rate of the particular expendable part in association with the light emission intensity of each gas of the multiple gases including fluorine gas.Type: ApplicationFiled: December 14, 2017Publication date: December 12, 2019Inventors: Shu KUSANO, Yusuke HIRAYAMA
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Publication number: 20190244794Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.Type: ApplicationFiled: April 19, 2019Publication date: August 8, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO
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Patent number: 10297428Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.Type: GrantFiled: April 29, 2015Date of Patent: May 21, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano
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Patent number: 9978566Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.Type: GrantFiled: October 7, 2016Date of Patent: May 22, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano, Etsuji Ito, Kazuya Nagaseki
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Publication number: 20170103877Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.Type: ApplicationFiled: October 7, 2016Publication date: April 13, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO, Etsuji ITO, Kazuya NAGASEKI
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Publication number: 20150332898Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.Type: ApplicationFiled: April 29, 2015Publication date: November 19, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO
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Publication number: 20150072534Abstract: A plasma processing apparatus for performing a plasma process on a substrate includes: a mounting table configured to mount thereon the substrate; an electromagnet including a core member and a plurality of coils; a current source connected to both ends of the coils for supplying currents to the coils; and a control unit configured to control the current source to start or stop and to control a current value of the current source. The core member is made of a magnetic material and has a structure including a column-shaped member, multiple cylindrical members, and a base member. The plurality of coils are accommodated in grooves and wound around an outer peripheral surface of the column-shaped member and the cylindrical members, and the grooves are formed between the column-shaped member and one of the cylindrical members and between the cylindrical members.Type: ApplicationFiled: October 21, 2014Publication date: March 12, 2015Inventors: Shinji Himori, Etsuji Ito, Akihiro Yokota, Shu Kusano, Hiroaki Ishizuka, Kazuya Nagaseki
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Patent number: 8895454Abstract: In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.Type: GrantFiled: January 20, 2014Date of Patent: November 25, 2014Assignee: Tokyo Electron LimitedInventors: Shinji Himori, Etsuji Ito, Akihiro Yokota, Shu Kusano, Hiroaki Ishizuka, Kazuya Nagaseki
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Publication number: 20140206199Abstract: In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.Type: ApplicationFiled: January 20, 2014Publication date: July 24, 2014Inventors: Shinji Himori, Etsuji Ito, Akihiro Yokota, Shu KUSANO, Hiroaki Ishizuka, Kazuya Nagaseki