Abstract: Provided is a landing pad structure including a substrate, a plurality of landing pads, a guard ring, and an edge pattern. The substrate includes a cell region, a periphery region, and a guard ring region located between the cell region and the periphery region. The landing pads are arranged on the substrate in the cell region in a hexagonal close packing (HCP) configuration. The guard ring is disposed on the substrate in the guard ring region in a strip form. The edge pattern is disposed on the substrate in the cell region and close to the guard ring region. A method of manufacturing the landing pad structure is also provided.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a plurality of gate structures, a plurality of dielectric structures, and spacers. The plurality of gate structures is disposed on the substrate. The plurality of dielectric structures is respectively disposed between the gate structures and the substrate, wherein a top width of the dielectric structure is less than the bottom width of the dielectric structure. The spacers are disposed on the sidewalls of the gate structures and cover the sidewalls of the dielectric structures.

Abstract: A semiconductor device is provided. The semiconductor device includes a core structure, a first pattern and a second pattern. The core structure is disposed on a substrate. The first pattern covers a sidewall of a bottom portion of the core structure. The top surface of the first pattern is lower than a top surface of the core structure. The second pattern is disposed on the first pattern and covering a top portion of the core structure. A sidewall of the top portion of the core structure and the top surface of the core structure are covered by the second pattern. The second pattern has an upper portion tapered away from the substrate. A material of the first pattern is different from a material of the second pattern.

Abstract: Provided is a landing pad structure including a substrate, a plurality of landing pads, a guard ring, and an edge pattern. The substrate includes a cell region, a periphery region, and a guard ring region located between the cell region and the periphery region. The landing pads are arranged on the substrate in the cell region in a hexagonal close packing (HCP) configuration. The guard ring is disposed on the substrate in the guard ring region in a strip form. The edge pattern is disposed on the substrate in the cell region and close to the guard ring region. A method of manufacturing the landing pad structure is also provided.

Abstract: A semiconductor device is provided. The semiconductor device includes a core structure, a first pattern and a second pattern. The core structure is disposed on a substrate. The first pattern covers a sidewall of a bottom portion of the core structure. The top surface of the first pattern is lower than a top surface of the core structure. The second pattern is disposed on the first pattern and covering a top portion of the core structure. A sidewall of the top portion of the core structure and the top surface of the core structure are covered by the second pattern. The second pattern has an upper portion tapered away from the substrate. A material of the first pattern is different from a material of the second pattern.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. A core structure and a first material layer are formed on a substrate in order. A top surface of the first material layer is lower than a top surface of the core structure. A second pattern is formed on an exposed surface of the core structure. The method of forming the second pattern includes forming a second material layer on the exposed surface of the core structure and the top surface of the first material layer and performing an anisotropic etching on the second material layer. The first material layer is patterned by using the second pattern as a mask to form a first pattern. The step of forming the second material layer and the step of performing an anisotropic etching on the second material layer are performed in the same etching chamber.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a plurality of gate structures, a plurality of dielectric structures, and spacers. The plurality of gate structures is disposed on the substrate. The plurality of dielectric structures is respectively disposed between the gate structures and the substrate, wherein a top width of the dielectric structure is less than the bottom width of the dielectric structure. The spacers are disposed on the sidewalls of the gate structures and cover the sidewalls of the dielectric structures.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. A core structure and a first material layer are formed on a substrate in order. A top surface of the first material layer is lower than a top surface of the core structure. A second pattern is formed on an exposed surface of the core structure. The method of forming the second pattern includes forming a second material layer on the exposed surface of the core structure and the top surface of the first material layer and performing an anisotropic etching on the second material layer. The first material layer is patterned by using the second pattern as a mask to form a first pattern. The step of forming the second material layer and the step of performing an anisotropic etching on the second material layer are performed in the same etching chamber.

Abstract: The present invention relates to isolated nucleic acids coding for enzymes or functionally active fragments thereof encoded by aminocoumarin biosynthetic gene clusters, to novel aminocoumarin compounds as well as to a method for the production of modified aminocoumarins utilizing the genetic information contained in said aminocoumarin biosynthetic gene clusters.