Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

Abstract: An optical navigation sensor module of an optical mouse includes a substrate with a lower surface; an image sensor arranged on the lower surface; and a light-emitting chip package using a SMD package electrically connected to the lower surface of the substrate. The light-emitting chip package emits a light beam to a tabletop and the tabletop reflects the light beam to the image sensor device. A method for manufacturing the optical navigation sensor module is also provided. This optical navigation sensor module of an optical mouse may reduce the optical loss, improve the sensitivity of the optical mouse and promote the production yield.

Abstract: The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.

Abstract: The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.

Abstract: The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a first electrode structure, and a second electrode structure. The substrate has an upper surface and a lower surface. The substrate therein includes at least one formed-through hole which is filled with a thermally conductive material. The multi-layer structure is formed on the upper surface of the substrate and includes a light-emitting region. The first electrode structure is formed on the multi-layer structure, and the second electrode structure is formed on the lower surface of the substrate. In particular, the heat generated during the operation of the semiconductor light-emitting device is conducted to the thermally conductive material and then is dissipated therefrom.

Abstract: A method for manufacturing LED devices is disclosed to manufacture vertical LED devices without removing nonconductive substrates. A conductive substrate is formed on the LED epitaxial layer of the nonconductive substrate to form a LED wafer by bonding or electroplating, which is further cut into a plurality of LED sticks with each space layer bonded between every two LED sticks. Secondly, the plurality of LED sticks and space layers are fixed by a fixture while type I semiconductor layer and active layer of the LED epitaxial layer of each LED stick are covered by each space layer. A transparent conductive layer is further formed thereon whereby to electrically connect with the type II semiconductor layer contrary to type I and are further formed with a plurality of electrodes thereon. Finally the said LED sticks are cut to a plurality of LED devices.

Abstract: A method for forming LED array is disclosed herein. First, a LED wafer, a substrate having a LED epitaxial layer thereon, is cut into a plurality of LED sticks. Then, each space layer is bonded between every two LED sticks to form a LED array.

Abstract: A dual wavelength semiconductor laser emitting apparatus including a substrate having a first laser emitting device and a second laser emitting device, and a manufacturing method thereof are provided. The manufacturing method includes stacking an active layer of the second laser emitting device onto an upper cladding layer of the first laser emitting device, which is taken as a lower cladding layer of the second laser emitting device. Thereby the first laser emitting device and the second laser emitting device formed on the substrate possess a common electrode and respectively oscillate laser beams having different wavelengths in the semiconductor laser emitting apparatus.

Abstract: A dual wavelength semiconductor laser emitting apparatus including a substrate having a first laser emitting device and a second laser emitting device, and a manufacturing method thereof are provided. The manufacturing method includes stacking an active layer of the second laser emitting device onto an upper cladding layer of the first laser emitting device, which is taken as a lower cladding layer of the second laser emitting device. Thereby the first laser emitting device and the second laser emitting device formed on the substrate possess a common electrode and respectively oscillate laser beams having different wavelengths in the semiconductor laser emitting apparatus.